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公开(公告)号：US11581476B2
公开(公告)日：2023-02-14
申请号：US16818881
申请日：2020-03-13
Inventor： Chun-Wen Cheng , Chun Yin Tsai , Chia-Hua Chu
IPC: H01L41/08 , H01L41/047 , H01L41/293 , H01L41/083
Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a first piezoelectric layer, and a first dummy layer. The first piezoelectric layer is over the substrate, and the first piezoelectric layer has a first top surface. The first dummy layer is over the first piezoelectric layer, and the first dummy layer has a second top surface. And an average roughness of the first top surface is greater than an average roughness of the second top surface. A method for manufacturing the semiconductor structure is also provided.
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公开(公告)号：US11498832B2
公开(公告)日：2022-11-15
申请号：US15984610
申请日：2018-05-21
Inventor： Chia-Hua Chu , Chun-Wen Cheng
IPC: B81C1/00
Abstract: A stacked semiconductor structure includes a first substrate. A multilayer interconnect is disposed over the first substrate. Metal sections are disposed over the multilayer interconnect. First bonding features are over the metal sections. A second substrate has a front surface. A cavity extends from the front surface into a depth D in the second substrate. A movable structure is disposed over the front surface of the second substrate and suspending over the cavity. The movable structure includes a dielectric membrane, metal units over the dielectric membrane and a cap dielectric layer over the metal units. Second bonding features are over the cap dielectric layer and bonded to the first bonding features. The second bonding features extend through the cap dielectric layer and electrically coupled to the metal units.
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公开(公告)号：US11418887B2
公开(公告)日：2022-08-16
申请号：US16904560
申请日：2020-06-18
Inventor： Chun-Wen Cheng , Chun Yin Tsai , Chia-Hua Chu
Abstract: A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate and a membrane over the substrate. The membrane includes a piezoelectric material configured to generate charges in response to an acoustic wave. The membrane includes a via pattern having first lines that partition the membrane into slices such that the slices are separated from each other at a first region near an edge of the membrane and connected to each other at a second region.
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公开(公告)号：US11414763B2
公开(公告)日：2022-08-16
申请号：US16706054
申请日：2019-12-06
Inventor： Ming-Ta Lei , Chia-Hua Chu , Hsin-Chih Chiang , Tung-Tsun Chen , Chun-Wen Cheng
Abstract: The present disclosure provides a method of manufacturing a gas sensor. The method includes the following operations: a substrate is received; a conductor layer is formed over the substrate; the conductor layer is patterned to form a conductor with a plurality of openings by an etching operation, the openings being arranged in a repeating pattern, a minimal dimension of the opening being about 4 micrometers; and a gas-sensing film is formed over the conductor.
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公开(公告)号：US10508345B2
公开(公告)日：2019-12-17
申请号：US14879018
申请日：2015-10-08
Inventor： Ming-Ta Lei , Chia-Hua Chu , Hsin-Chih Chiang , Tung-Tsun Chen , Chun-Wen Cheng
IPC: C23F4/00
Abstract: Some embodiments of the present disclosure provide a gas sensor in an IOT. The gas sensor includes a substrate, a conductor disposed above the substrate, and a sensing film disposed over the conductor. The conductor has a top-view pattern including a plurality of openings, a minimal dimension of the opening being less than about 4 micrometer; and a perimeter enclosing the opening. Some embodiments of the present disclosure provide a method of manufacturing a gas sensor. The method includes receiving a substrate; forming a conductor, over the substrate; patterning the conductor to form a plurality of openings in the conductor by an etching operation, and forming a gas-sensing film over the conductor. The openings are arranged in a repeating pattern, and a minimal dimension of the opening being about 4 micrometer.
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Patent Agency Ranking
公开(公告)号：US10508027B2
公开(公告)日：2019-12-17
申请号：US16058897
申请日：2018-08-08
Inventor： Jung-Huei Peng , Chia-Hua Chu , Fei-Lung Lai , Shiang-Chi Lin
Abstract: The present disclosure provides a CMOS structure, including a substrate, a metallization layer over the substrate, a sensing structure over the metallization layer, and a signal transmitting structure adjacent to the sensing structure. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier over the outgassing layer; and an electrode over the patterned outgassing barrier. The signal transmitting structure electrically couples the electrode and the metallization layer.
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公开(公告)号：US10351417B2
公开(公告)日：2019-07-16
申请号：US15687904
申请日：2017-08-28
Inventor： Chun-Wen Cheng , Chi-Hang Chin , Jung-Huei Peng , Chia-Hua Chu , Shang-Ying Tsai
Abstract: A semiconductor device includes a first substrate, a second substrate bonded to the first substrate from a first surface of the second substrate, a third substrate bonded to the second substrate from a second surface of the second substrate, a cavity defined by the first substrate, the second substrate and the third substrate; and a viewer window provided in the third substrate and aligned with the cavity; wherein the inside of the cavity is observed through the viewer window.
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公开(公告)号：US20190047851A1
公开(公告)日：2019-02-14
申请号：US16160683
申请日：2018-10-15
Inventor： Kai-Chih Liang , Chia-Hua Chu , Te-Hao Lee , Jiou-Kang Lee , Chung-Hsien Lin
CPC classification number: B81C1/00515 , B81B7/0006 , B81B7/0077 , B81B2201/0235 , B81B2203/0315 , B81B2207/07 , B81B2207/095 , B81B2207/096 , B81C1/00293 , B81C1/00301 , B81C2201/0132 , B81C2201/014 , B81C2203/0109 , B81C2203/0118 , B81C2203/0145 , B81C2203/035 , H01L2224/11
Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.
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9.发明申请公开(公告)号：US20180327254A1
公开(公告)日：2018-11-15
申请号：US16023631
申请日：2018-06-29
Inventor： Chun-Wen Cheng , Chia-Hua Chu
CPC classification number: B81B7/007 , B81B2201/0257 , B81B2201/0264 , B81C1/00238 , B81C1/00301 , B81C2201/019 , B81C2203/0792
Abstract: A method embodiment includes providing a MEMS wafer. A portion of the MEMS wafer is patterned to provide a first membrane for a microphone device and a second membrane for a pressure sensor device. A carrier wafer is bonded to the MEMS wafer. The carrier wafer is etched to expose the first membrane and a first surface of the second membrane to an ambient environment. A MEMS structure is formed in the MEMS wafer. A cap wafer is bonded to a side of the MEMS wafer opposing the carrier wafer to form a first sealed cavity including the MEMS structure and a second sealed cavity including a second surface of the second membrane for the pressure sensor device. The cap wafer comprises an interconnect structure. A through-via electrically connected to the interconnect structure is formed in the cap wafer.
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公开(公告)号：US10017382B2
公开(公告)日：2018-07-10
申请号：US15043850
申请日：2016-02-15
Inventor： Chia-Hua Chu , Chun-Wen Cheng
IPC: H01L21/00 , B81C1/00 , B81B3/00 , G01C19/56 , G01P15/00 , G01L19/00 , G01L9/00 , G01P15/08 , G01P15/125 , B81B7/04 , G01C19/5769 , B81B7/02 , B81B7/00
CPC classification number: B81C1/00293 , B81B3/0021 , B81B7/0041 , B81B7/007 , B81B7/02 , B81B7/04 , B81B2201/0235 , B81B2201/0242 , B81B2201/025 , B81B2201/0264 , B81C1/00134 , B81C1/00309 , B81C2201/013 , B81C2203/0118 , G01C19/56 , G01C19/5769 , G01L9/0044 , G01L19/0076 , G01L19/0092 , G01P15/00 , G01P15/0802 , G01P15/125
Abstract: A method embodiment includes providing a micro-electromechanical (MEMS) wafer including a polysilicon layer having a first and a second portion. A carrier wafer is bonded to a first surface of the MEMS wafer. Bonding the carrier wafer creates a first cavity. A first surface of the first portion of the polysilicon layer is exposed to a pressure level of the first cavity. A cap wafer is bonded to a second surface of the MEMS wafer opposite the first surface of the MEMS wafer. The bonding the cap wafer creates a second cavity comprising the second portion of the polysilicon layer and a third cavity. A second surface of the first portion of the polysilicon layer is exposed to a pressure level of the third cavity. The first cavity or the third cavity is exposed to an ambient environment.
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