- 专利标题: Reference generator and current source transistor based on complementary current field-effect transistor devices
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申请号: US15748866申请日: 2016-07-29
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公开(公告)号: US10514716B2公开(公告)日: 2019-12-24
- 发明人: Susan Marya Schober , Robert C. Schober
- 申请人: Circuit Seed, LLC
- 申请人地址: US CA Newport Beach
- 专利权人: Circuit Seed, LLC
- 当前专利权人: Circuit Seed, LLC
- 当前专利权人地址: US CA Newport Beach
- 代理机构: Lee & Hayes, P.C.
- 国际申请: PCT/US2016/044792 WO 20160729
- 国际公布: WO2017/019981 WO 20170202
- 主分类号: G05F3/24
- IPC分类号: G05F3/24 ; G05F3/26 ; H03F3/16 ; H01L27/092
摘要:
Existing proportional to absolute temperature (PTAT)/complementary-to-absolute-temperature (CTAT) reference voltage circuit requires a large components count and foot print, precise device matching for accuracy and unsatisfactory sensitivity error or variation to temperature and humidity. The present invention relates to a novel approach for such reference voltage circuit based on a self-biased complementary pair of n-type and p-type current field-effect transistors, which provides rail PTAT, rail CTAT and analog reference voltages.
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