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29 条记录 (耗时 0.032 秒)

    CONTROL CIRCUIT
    2.
    发明申请
    CONTROL CIRCUIT 审中-公开

    公开(公告)号：US20190334491A1

    公开(公告)日：2019-10-31

    申请号：US16510560

    申请日：2019-07-12

    申请人： Circuit Seed, LLC

    发明人： Susan Marya Schober ,  Robert C. Schober

    IPC分类号： H03F3/45 ,  H03F1/08 ,  H03F3/30 ,  H01L29/423 ,  H03K19/003 ,  H01L29/772 ,  H01L29/78

    摘要： The present invention relates to a control circuit for producing a first and second control signals in order for a clock signal to break before making delays, comprising a first and second AND gates for receiving clock signals, first and second alignment blocks that receives output signals from the first and second AND gates for providing alignment prior to transmitting the first and second control signals, and generate the first and second control signals, respectively.

    Complementary current field-effect transistor devices and amplifiers
    6.
    发明授权
    Complementary current field-effect transistor devices and amplifiers 有权

    公开(公告)号：US10211781B2

    公开(公告)日：2019-02-19

    申请号：US15748305

    申请日：2015-07-29

    申请人： Circuit Seed, LLC

    发明人： Robert C. Schober ,  Susan Marya Schober

    IPC分类号： H03F3/16 ,  H03F1/02

    摘要： The present invention relates to a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. In particular, the present invention relates to a solid state device based on a complementary pair of n-type and p-type current field-effect transistors, each of which has two control ports, namely a low impedance port and gate control port, while a conventional solid state device has one control port, namely gate control port. This novel solid state device provides various improvement over the conventional devices.

    SUPER-SATURATION CURRENT FIELD EFFECT TRANSISTOR AND TRANS-IMPEDANCE MOS DEVICE
    8.
    发明申请
    SUPER-SATURATION CURRENT FIELD EFFECT TRANSISTOR AND TRANS-IMPEDANCE MOS DEVICE 审中-公开

    公开(公告)号：US20200027880A1

    公开(公告)日：2020-01-23

    申请号：US16586090

    申请日：2019-09-27

    申请人： Circuit Seed, LLC

    发明人： Susan Marya Schober ,  Robert C. Schober

    IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L27/02 ,  H03F1/08 ,  H03F3/04 ,  H03F3/45 ,  H03F3/16

    摘要： The present invention relates to an improvement to a current field effect transistor and trans-impedance MOS devices based on a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. The present invention further relates to a super-saturation current field effect transistor (xiFET), having a source, a drain, a diffusion, a first gate, and a second gate terminals, in which a source channel is defined between the source and diffusion terminals, a drain channel is defined between the drain and diffusion terminals. The first gate terminal is capacitively coupled to the source channel; and the second gate terminal is capacitively coupled to said drain channel. The diffusion terminal receives a current causing change in diffused charge density throughout said source and drain channel. The xiFET provides a fundamental building block for designing various analog circuits.