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公开(公告)号：US10554174B2
公开(公告)日：2020-02-04
申请号：US16146161
申请日：2018-09-28
申请人： Circuit Seed, LLC
IPC分类号： H03F3/16 , H03F1/02 , H03K19/0185 , H03K19/094
摘要： The present invention relates to a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. In particular, the present invention relates to a solid state device based on a complementary pair of n-type and p-type current field-effect transistors, each of which has two control ports, namely a low impedance port and gate control port, while a conventional solid state device has one control port, namely gate control port. This novel solid state device provides various improvement over the conventional devices.
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公开(公告)号：US20190252382A1
公开(公告)日：2019-08-15
申请号：US16394578
申请日：2019-04-25
申请人： Circuit Seed, LLC
IPC分类号： H01L27/092 , H03F3/16 , H03F3/04 , H03F3/45 , H01L21/8238 , H03F1/08 , H01L27/02
CPC分类号： H01L27/092 , H01L21/823814 , H01L27/0207 , H03F1/086 , H03F3/04 , H03F3/165 , H03F3/45179 , H03F2203/45246
摘要： The present invention relates to an improvement to a current field effect transistor and trans-impedance MOS devices based on a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. The present invention further relates to a super-saturation current field effect transistor (xiFET), having a source, a drain, a diffusion, a first gate, and a second gate terminals, in which a source channel is defined between the source and diffusion terminals, a drain channel is defined between the drain and diffusion terminals. The first gate terminal is capacitively coupled to the source channel; and the second gate terminal is capacitively coupled to said drain channel.The diffusion terminal receives a current causing change in diffused charge density throughout said source and drain channel. The xiFET provides a fundamental building block for designing various analog circuites.
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公开(公告)号：US10283506B2
公开(公告)日：2019-05-07
申请号：US15748908
申请日：2016-07-29
申请人： Circuit Seed, LLC
IPC分类号： H01L27/092 , H01L21/8238 , H01L27/02 , H03F1/08 , H03F3/04 , H03F3/45 , H03F3/16
摘要： The present invention relates to an improvement to a current field effect transistor and trans-impedance MOS devices based on a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. The present invention further relates to a super-saturation current field effect transistor (xiFET), having a source, a drain, a diffusion, a first gate, and a second gate terminals, in which a source channel is defined between the source and diffusion terminals, a drain channel is defined between the drain and diffusion terminals. The first gate terminal is capacitively coupled to the source channel; and the second gate terminal is capacitively coupled to said drain channel. The diffusion terminal receives a current causing change in diffused charge density throughout said source and drain channel. The xiFET provides a fundamental building block for designing various analog circuits.
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公开(公告)号：US20180308843A1
公开(公告)日：2018-10-25
申请号：US15748908
申请日：2016-07-29
申请人： Circuit Seed, LLC
IPC分类号： H01L27/092 , H03F1/08 , H03F3/16 , H03F3/45 , H01L21/8238 , H01L27/02
CPC分类号： H01L27/092 , H01L21/823814 , H01L27/0207 , H03F1/086 , H03F3/04 , H03F3/165 , H03F3/45179 , H03F2203/45246
摘要： The present invention relates to an improvement to a current field effect transistor and trans-impedance MOS devices based on a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. The present invention further relates to a super-saturation current field effect transistor (xiFET), having a source, a drain, a diffusion, a first gate, and a second gate terminals, in which a source channel is defined between the source and diffusion terminals, a drain channel is defined between the drain and diffusion terminals. The first gate terminal is capacitively coupled to the source channel; and the second gate terminal is capacitively coupled to said drain channel. The diffusion terminal receives a current causing change in diffused charge density throughout said source and drain channel. The xiFET provides a fundamental building block for designing various analog circuits.
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公开(公告)号：US20200027880A1
公开(公告)日：2020-01-23
申请号：US16586090
申请日：2019-09-27
申请人： Circuit Seed, LLC
IPC分类号： H01L27/092 , H01L21/8238 , H01L27/02 , H03F1/08 , H03F3/04 , H03F3/45 , H03F3/16
摘要： The present invention relates to an improvement to a current field effect transistor and trans-impedance MOS devices based on a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. The present invention further relates to a super-saturation current field effect transistor (xiFET), having a source, a drain, a diffusion, a first gate, and a second gate terminals, in which a source channel is defined between the source and diffusion terminals, a drain channel is defined between the drain and diffusion terminals. The first gate terminal is capacitively coupled to the source channel; and the second gate terminal is capacitively coupled to said drain channel. The diffusion terminal receives a current causing change in diffused charge density throughout said source and drain channel. The xiFET provides a fundamental building block for designing various analog circuits.
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6.发明申请公开(公告)号：US20200014349A1
公开(公告)日：2020-01-09
申请号：US16571695
申请日：2019-09-16
申请人： Circuit Seed, LLC
IPC分类号： H03F3/45 , H01L29/78 , H01L29/423 , H03K19/0185 , H03F3/30 , H03F3/195 , H03F3/193 , H03F1/22 , H03F1/08 , H03F3/21 , H03F3/08
摘要： The present invention relates to a novel and inventive compound device structure for a low noise current amplifier or trans-impedance amplifier. The trans-impedance amplifier includes an amplifier portion, which converts current input into voltage using a complimentary pair of novel n-type and p-type current-injection field-effect transistors (NiFET and PiFET), and a bias generation portion using another complimentary pair of NiFET and PiFET. Trans-impedance of NiFET and PiFET and its gain may be configured and programmed by a ratio of width (W) over length (L) of source channel over the width (W) over length (L) of drain channel (W/L of source channel/W/L of drain channel).
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公开(公告)号：US10514716B2
公开(公告)日：2019-12-24
申请号：US15748866
申请日：2016-07-29
申请人： Circuit Seed, LLC
IPC分类号： G05F3/24 , G05F3/26 , H03F3/16 , H01L27/092
摘要： Existing proportional to absolute temperature (PTAT)/complementary-to-absolute-temperature (CTAT) reference voltage circuit requires a large components count and foot print, precise device matching for accuracy and unsatisfactory sensitivity error or variation to temperature and humidity. The present invention relates to a novel approach for such reference voltage circuit based on a self-biased complementary pair of n-type and p-type current field-effect transistors, which provides rail PTAT, rail CTAT and analog reference voltages.
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公开(公告)号：US20190123688A1
公开(公告)日：2019-04-25
申请号：US16146161
申请日：2018-09-28
申请人： Circuit Seed, LLC
IPC分类号： H03F1/02 , H03F3/16 , H03K19/094 , H03K19/0185
摘要： The present invention relates to a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. In particular, the present invention relates to a solid state device based on a complementary pair of n-type and p-type current field-effect transistors, each of which has two control ports, namely a low impedance port and gate control port, while a conventional solid state device has one control port, namely gate control port. This novel solid state device provides various improvement over the conventional devices.
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公开(公告)号：US20210020766A1
公开(公告)日：2021-01-21
申请号：US16982029
申请日：2019-03-20
申请人： Circuit Seed, LLC
发明人： Susan Marya Schober , Robert C. Schober , Timothy Howard Richards , Terrence R. Hudrlik , Aaron Curry
IPC分类号： H01L29/768 , H01L27/092
摘要： The present invention relates to novel inventive compound device structures, enabling charged-based logic gates. In particular, a switched p-channel and/or n-channel current field effect transistor, a solid state device based on a complimentary pair of a switched p-channel and n-channel current field effect transistors, and/or a solid state device based on a complimentary pair of a p-channel and n-channel current field effect transistors are used for constructing such logic gates. The switched current field effect transistor comprising a source and a drain, wherein the source and drain defines a channel, a diffusion that divides the channel into a source channel segment between the source and the diffusion and a drain channel segment between the drain and the diffusion, a source channel gate that is coupled to the source channel, and a drain channel gate that coupled to the drain channel. These novel device structures provide various improvements over the conventional devices.
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公开(公告)号：US20190334491A1
公开(公告)日：2019-10-31
申请号：US16510560
申请日：2019-07-12
申请人： Circuit Seed, LLC
IPC分类号： H03F3/45 , H03F1/08 , H03F3/30 , H01L29/423 , H03K19/003 , H01L29/772 , H01L29/78
摘要： The present invention relates to a control circuit for producing a first and second control signals in order for a clock signal to break before making delays, comprising a first and second AND gates for receiving clock signals, first and second alignment blocks that receives output signals from the first and second AND gates for providing alignment prior to transmitting the first and second control signals, and generate the first and second control signals, respectively.
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