公开(公告)号：US20200027880A1

公开(公告)日：2020-01-23

申请号：US16586090

申请日：2019-09-27

申请人： Circuit Seed, LLC

发明人： Susan Marya Schober ,  Robert C. Schober

IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L27/02 ,  H03F1/08 ,  H03F3/04 ,  H03F3/45 ,  H03F3/16

摘要： The present invention relates to an improvement to a current field effect transistor and trans-impedance MOS devices based on a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. The present invention further relates to a super-saturation current field effect transistor (xiFET), having a source, a drain, a diffusion, a first gate, and a second gate terminals, in which a source channel is defined between the source and diffusion terminals, a drain channel is defined between the drain and diffusion terminals. The first gate terminal is capacitively coupled to the source channel; and the second gate terminal is capacitively coupled to said drain channel. The diffusion terminal receives a current causing change in diffused charge density throughout said source and drain channel. The xiFET provides a fundamental building block for designing various analog circuits.

公开(公告)号：US20200014349A1

公开(公告)日：2020-01-09

申请号：US16571695

申请日：2019-09-16

申请人： Circuit Seed, LLC

发明人： Susan Marya Schober ,  Robert C. Schober

IPC分类号： H03F3/45 ,  H01L29/78 ,  H01L29/423 ,  H03K19/0185 ,  H03F3/30 ,  H03F3/195 ,  H03F3/193 ,  H03F1/22 ,  H03F1/08 ,  H03F3/21 ,  H03F3/08

摘要： The present invention relates to a novel and inventive compound device structure for a low noise current amplifier or trans-impedance amplifier. The trans-impedance amplifier includes an amplifier portion, which converts current input into voltage using a complimentary pair of novel n-type and p-type current-injection field-effect transistors (NiFET and PiFET), and a bias generation portion using another complimentary pair of NiFET and PiFET. Trans-impedance of NiFET and PiFET and its gain may be configured and programmed by a ratio of width (W) over length (L) of source channel over the width (W) over length (L) of drain channel (W/L of source channel/W/L of drain channel).

公开(公告)号：US10514716B2

公开(公告)日：2019-12-24

申请号：US15748866

申请日：2016-07-29

申请人： Circuit Seed, LLC

发明人： Susan Marya Schober ,  Robert C. Schober

IPC分类号： G05F3/24 ,  G05F3/26 ,  H03F3/16 ,  H01L27/092

摘要： Existing proportional to absolute temperature (PTAT)/complementary-to-absolute-temperature (CTAT) reference voltage circuit requires a large components count and foot print, precise device matching for accuracy and unsatisfactory sensitivity error or variation to temperature and humidity. The present invention relates to a novel approach for such reference voltage circuit based on a self-biased complementary pair of n-type and p-type current field-effect transistors, which provides rail PTAT, rail CTAT and analog reference voltages.

公开(公告)号：US20190123688A1

公开(公告)日：2019-04-25

申请号：US16146161

申请日：2018-09-28

申请人： Circuit Seed, LLC

发明人： Robert C. Schober ,  Susan Marya Schober

IPC分类号： H03F1/02 ,  H03F3/16 ,  H03K19/094 ,  H03K19/0185

摘要： The present invention relates to a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. In particular, the present invention relates to a solid state device based on a complementary pair of n-type and p-type current field-effect transistors, each of which has two control ports, namely a low impedance port and gate control port, while a conventional solid state device has one control port, namely gate control port. This novel solid state device provides various improvement over the conventional devices.

公开(公告)号：US10554174B2

公开(公告)日：2020-02-04

申请号：US16146161

申请日：2018-09-28

申请人： Circuit Seed, LLC

发明人： Robert C. Schober ,  Susan Marya Schober

IPC分类号： H03F3/16 ,  H03F1/02 ,  H03K19/0185 ,  H03K19/094

摘要： The present invention relates to a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. In particular, the present invention relates to a solid state device based on a complementary pair of n-type and p-type current field-effect transistors, each of which has two control ports, namely a low impedance port and gate control port, while a conventional solid state device has one control port, namely gate control port. This novel solid state device provides various improvement over the conventional devices.

公开(公告)号：US20190252382A1

公开(公告)日：2019-08-15

申请号：US16394578

申请日：2019-04-25

申请人： Circuit Seed, LLC

发明人： Susan Marya Schober ,  Robert C. Schober

IPC分类号： H01L27/092 ,  H03F3/16 ,  H03F3/04 ,  H03F3/45 ,  H01L21/8238 ,  H03F1/08 ,  H01L27/02

CPC分类号： H01L27/092 ,  H01L21/823814 ,  H01L27/0207 ,  H03F1/086 ,  H03F3/04 ,  H03F3/165 ,  H03F3/45179 ,  H03F2203/45246

摘要： The present invention relates to an improvement to a current field effect transistor and trans-impedance MOS devices based on a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. The present invention further relates to a super-saturation current field effect transistor (xiFET), having a source, a drain, a diffusion, a first gate, and a second gate terminals, in which a source channel is defined between the source and diffusion terminals, a drain channel is defined between the drain and diffusion terminals. The first gate terminal is capacitively coupled to the source channel; and the second gate terminal is capacitively coupled to said drain channel.The diffusion terminal receives a current causing change in diffused charge density throughout said source and drain channel. The xiFET provides a fundamental building block for designing various analog circuites.

公开(公告)号：US10283506B2

公开(公告)日：2019-05-07

申请号：US15748908

申请日：2016-07-29

申请人： Circuit Seed, LLC

发明人： Susan Marya Schober ,  Robert C. Schober

IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L27/02 ,  H03F1/08 ,  H03F3/04 ,  H03F3/45 ,  H03F3/16

摘要： The present invention relates to an improvement to a current field effect transistor and trans-impedance MOS devices based on a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. The present invention further relates to a super-saturation current field effect transistor (xiFET), having a source, a drain, a diffusion, a first gate, and a second gate terminals, in which a source channel is defined between the source and diffusion terminals, a drain channel is defined between the drain and diffusion terminals. The first gate terminal is capacitively coupled to the source channel; and the second gate terminal is capacitively coupled to said drain channel. The diffusion terminal receives a current causing change in diffused charge density throughout said source and drain channel. The xiFET provides a fundamental building block for designing various analog circuits.

公开(公告)号：US20180308843A1

公开(公告)日：2018-10-25

申请号：US15748908

申请日：2016-07-29

申请人： Circuit Seed, LLC

发明人： Susan Marya Schober ,  Robert C. Schober

IPC分类号： H01L27/092 ,  H03F1/08 ,  H03F3/16 ,  H03F3/45 ,  H01L21/8238 ,  H01L27/02

CPC分类号： H01L27/092 ,  H01L21/823814 ,  H01L27/0207 ,  H03F1/086 ,  H03F3/04 ,  H03F3/165 ,  H03F3/45179 ,  H03F2203/45246

摘要： The present invention relates to an improvement to a current field effect transistor and trans-impedance MOS devices based on a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. The present invention further relates to a super-saturation current field effect transistor (xiFET), having a source, a drain, a diffusion, a first gate, and a second gate terminals, in which a source channel is defined between the source and diffusion terminals, a drain channel is defined between the drain and diffusion terminals. The first gate terminal is capacitively coupled to the source channel; and the second gate terminal is capacitively coupled to said drain channel. The diffusion terminal receives a current causing change in diffused charge density throughout said source and drain channel. The xiFET provides a fundamental building block for designing various analog circuits.

公开(公告)号：US20200186091A1

公开(公告)日：2020-06-11

申请号：US16752454

申请日：2020-01-24

申请人： Circuit Seed, LLC

发明人： Robert C. Schober ,  Susan Marya Schober

IPC分类号： H03F1/02 ,  H03K19/0948 ,  H01L29/78 ,  H01L27/092 ,  H03K19/0185 ,  H01L29/423 ,  H03F3/16 ,  H03K19/094

摘要： The present invention relates to a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. In particular, the present invention relates to a solid state device based on a complementary pair of n-type and p-type current field-effect transistors, each of which has two control ports, namely a low impedance port and gate control port, while a conventional solid state device has one control port, namely gate control port. This novel solid state device provides various improvement over the conventional devices.

公开(公告)号：US20200177193A1

公开(公告)日：2020-06-04

申请号：US16594776

申请日：2019-10-07

申请人： Circuit Seed, LLC

发明人： Susan Marya Schober ,  Robert C. Schober ,  Herbert M. Shapiro

IPC分类号： H03L7/099 ,  H03L7/24 ,  H03K3/03 ,  H03B5/12 ,  H03K3/354 ,  H03L7/04 ,  H03L7/089 ,  H03L7/091

摘要： A novel voltage controlled oscillator (VCO) based on complementary current-injection field-effect transistor (CiFET) devices is disclosed. The VCO includes an odd number stages of rings, each of rings comprises a CiFET.