- 专利标题： Semiconductor device and a method for fabricating the same
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申请号： US16049378申请日： 2018-07-30
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公开(公告)号： US10515964B2公开(公告)日： 2019-12-24
- 发明人: Shun-Jang Liao , Chia-Chun Liao , Shu-Hui Wang , Shih-Hsun Chang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McDermott Will & Emery LLP
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L29/49 ; H01L27/088 ; H01L21/28 ; H01L21/8238 ; H01L21/8234 ; H01L21/768
摘要：
A semiconductor device includes first-type-channel field effect transistors (FETs) including a first first-type-channel FET including a first gate structure and a second first-type-channel FET including a second gate structure. The first first-type-channel FET has a smaller threshold voltage than the second first-type-channel FET. The first gate structure includes a first work function adjustment material (WFM) layer and the second gate structure includes a second WFM layer. At least one of thickness and material of the first and second WFM layers is different from each other.
公开/授权文献
- US10825813B2 Semiconductor device and a method for fabricating the same 公开/授权日：2020-11-03
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