- 专利标题： Circuitry and methods for programming resistive random access memory devices
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申请号： US16037417申请日： 2018-07-17
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公开(公告)号： US10522224B2公开(公告)日： 2019-12-31
- 发明人: John L. McCollum
- 申请人： Microsemi SoC Corp.
- 申请人地址： US CA San Jose
- 专利权人： Microsemi SoC Corp.
- 当前专利权人： Microsemi SoC Corp.
- 当前专利权人地址： US CA San Jose
- 代理机构： Glass and Associates
- 代理商 Kenneth D'Alessandro; Kenneth Glass
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C13/00 ; H01L27/24 ; H01L45/00 ; G11C5/06
摘要：
A method for programming a ReRAM cell including a ReRAM device connected in series with an access transistor includes biasing the ReRAM cell with a programming potential that configures the access transistor in a common-source configuration and applying at least one programming voltage pulse to a gate of the access transistor, the programming voltage pulse having a magnitude selected to limit programming current to a preselected value.
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