A TMR element includes a base layer that is disposed on an upper surface of a via interconnect part, a magnetic tunnel junction that is disposed on a surface of the base layer, and an interlayer insulation layer that covers a side surface of each of the via interconnect part and the base layer. The base layer includes a stress relieving region. The magnetic tunnel junction includes a reference layer having a magnetization fixed direction, a magnetization free layer, and a tunnel barrier layer disposed between the reference layer and the magnetization free layer. The interlayer insulation layer includes an insulation material.