Invention Grant
- Patent Title: Wrap-around gate structures and methods of forming wrap-around gate structures
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Application No.: US15879109Application Date: 2018-01-24
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Publication No.: US10522687B2Publication Date: 2019-12-31
- Inventor: Ravi Pramod Kumar Vedula , Stephen Alan Fanelli , Farid Azzazy
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Moore IP/Qualcomm
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; H01L29/40 ; H01L29/06 ; H01L29/423 ; H01L27/12
Abstract:
A semiconductor device includes a channel structure that includes a first oxide layer, a second oxide layer, and a channel region between the first oxide layer and the second oxide layer. The semiconductor device includes a first gate structure proximate to at least three sides of the channel structure. The semiconductor device includes a second gate structure proximate to at least a fourth side of the channel structure.
Public/Granted literature
- US20180233600A1 WRAP-AROUND GATE STRUCTURES AND METHODS OF FORMING WRAP-AROUND GATE STRUCTURES Public/Granted day:2018-08-16
Information query
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