公开(公告)号：US20180233600A1

公开(公告)日：2018-08-16

申请号：US15879109

申请日：2018-01-24

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar Vedula ,  Stephen Alan Fanelli ,  Farid Azzazy

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/40 ,  H01L29/06 ,  H01L29/423

Abstract: A semiconductor device includes a channel structure that includes a first oxide layer, a second oxide layer, and a channel region between the first oxide layer and the second oxide layer. The semiconductor device includes a first gate structure proximate to at least three sides of the channel structure. The semiconductor device includes a second gate structure proximate to at least a fourth side of the channel structure.

公开(公告)号：US10522687B2

公开(公告)日：2019-12-31

申请号：US15879109

申请日：2018-01-24

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar Vedula ,  Stephen Alan Fanelli ,  Farid Azzazy

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/40 ,  H01L29/06 ,  H01L29/423 ,  H01L27/12

Abstract: A semiconductor device includes a channel structure that includes a first oxide layer, a second oxide layer, and a channel region between the first oxide layer and the second oxide layer. The semiconductor device includes a first gate structure proximate to at least three sides of the channel structure. The semiconductor device includes a second gate structure proximate to at least a fourth side of the channel structure.