- 专利标题: Semiconductor device
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申请号: US15868544申请日: 2018-01-11
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公开(公告)号: US10535533B2公开(公告)日: 2020-01-14
- 发明人: Yanghee Lee , Jonghyuk Park , Choongseob Shin , Hyojin Oh , Boun Yoon , Ilyoung Yoon
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey and Pierce, P.L.C.
- 优先权: KR10-2017-0088655 20170712
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L27/108 ; H01L21/768 ; H01L25/065 ; H01L49/02 ; H01L21/48
摘要:
A semiconductor may include a substrate including a cell array region and a TSV region, an insulation layer disposed on the substrate and having a recess region on the TSV region, a capacitor on the insulation layer of the cell array region, a dummy support pattern disposed on the insulation layer of the TSV region and overlapping the recess region, when viewed in plan, and a TSV electrode penetrating the dummy support pattern and the substrate.
公开/授权文献
- US20190019742A1 SEMICONDUCTOR DEVICE 公开/授权日:2019-01-17
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