发明授权
- 专利标题： Methods of forming a vertical semiconductor diode using an engineered substrate
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申请号： US16213512申请日： 2018-12-07
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公开(公告)号： US10535547B2公开(公告)日： 2020-01-14
- 发明人: Vladimir Odnoblyudov , Dilip Risbud , Ozgur Aktas , Cem Basceri
- 申请人： QROMIS, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： QROMIS, Inc.
- 当前专利权人： QROMIS, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/683 ; H01L29/778 ; H01L29/861 ; H01L21/02 ; H01L21/28 ; H01L21/48 ; H01L29/10 ; H01L29/20 ; H01L29/205 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; C30B25/18 ; C30B29/06 ; C30B29/40 ; H01L29/872 ; H01L29/40
摘要：
A semiconductor diode includes an engineered substrate including a substantially single crystal layer, a buffer layer coupled to the substantially single crystal layer, and a semi-insulating layer coupled to the buffer layer. The semiconductor diode also includes a first N-type gallium nitride layer coupled to the semi-insulating layer and a second N-type gallium nitride layer coupled to the first N-type gallium nitride layer. The first N-type gallium nitride layer has a first doping concentration and the second N-type gallium nitride layer has a second doping concentration less than the first doping concentration. The semiconductor diode further includes a P-type gallium nitride layer coupled to the second N-type gallium nitride layer, an anode contact coupled to the P-type gallium nitride layer, and a cathode contact coupled to a portion of the first N-type gallium nitride layer.
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