Invention Grant
- Patent Title: Method for fabricating an array of diodes, in particular for a non-volatile memory, and corresponding device
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Application No.: US16004195Application Date: 2018-06-08
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Publication No.: US10541270B2Publication Date: 2020-01-21
- Inventor: Francesco La Rosa , Stephan Niel , Arnaud Regnier
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee: STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee Address: FR Rousset
- Agency: Seed IP Law Group LLP
- Priority: FR1655067 20160603
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00 ; H01L27/12

Abstract:
The array of diodes comprises a matrix plane of diodes arranged according to columns in a first direction and according to rows in a second direction orthogonal to the first direction. The said diodes comprise a cathode region of a first type of conductivity and an anode region of a second type of conductivity, the said cathode and anode regions being superposed and disposed on an insulating layer situated on top of a semiconductor substrate.
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