Invention Grant
- Patent Title: Integrated semiconductor device and manufacturing method
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Application No.: US15875068Application Date: 2018-01-19
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Publication No.: US10544037B2Publication Date: 2020-01-28
- Inventor: Thoralf Kautzsch , Heiko Froehlich , Alessia Scire , Maik Stegemann , Bernhard Winkler , Andre Roeth , Steffen Bieselt , Mirko Vogt
- Applicant: Infineon Technologies Dresden GmbH
- Applicant Address: DE Dresden
- Assignee: Infineon Technologies Dresden GmbH
- Current Assignee: Infineon Technologies Dresden GmbH
- Current Assignee Address: DE Dresden
- Agency: Eschweiler & Potashnik, LLC
- Priority: DE102015111676 20150717; DE102016107059 20160415
- Main IPC: B81C1/00
- IPC: B81C1/00 ; B81B3/00

Abstract:
The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.
Public/Granted literature
- US20180155188A1 INTEGRATED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD Public/Granted day:2018-06-07
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