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公开(公告)号：US10060816B2
公开(公告)日：2018-08-28
申请号：US15372992
申请日：2016-12-08
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann , Andre Roeth , Bernhard Winkler , Boris Binder
CPC classification number: G01L9/0072 , B81B2201/0264 , B81B2203/0127 , B81C1/00158 , G01L9/0041 , G01L9/0073
Abstract: Embodiments relate to sensors and more particularly to structures for and methods of forming sensors that are easier to manufacture as integrated components and provide improved deflection of a sensor membrane, lamella or other movable element. In embodiments, a sensor comprises a support structure for a lamella, membrane or other movable element. The support structure comprises a plurality of support elements that hold or carry the movable element. The support elements can comprise individual points or feet-like elements, rather than a conventional interconnected frame, that enable improved motion of the movable element, easier removal of a sacrificial layer between the movable element and substrate during manufacture and a more favorable deflection ratio, among other benefits.
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2.发明申请SYSTEMS AND METHODS FOR HORIZONTAL INTEGRATION OF ACCELERATION SENSOR STRUCTURES 审中-公开用于加速传感器结构的水平积分的系统和方法公开(公告)号：US20160185594A1
公开(公告)日：2016-06-30
申请号：US15064916
申请日：2016-03-09
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann , Andre Roeth , Steffen Bieselt
IPC: B81B7/02
CPC classification number: B81B7/02 , B81B2201/0235 , B81B2201/0264 , B81B2207/015 , B81C1/00246 , B81C2203/0764 , H01L21/3065 , H01L29/84
Abstract: Embodiments relate to integrated circuit sensors, and more particularly to sensors integrated in an integrated circuit structure and methods for producing the sensors. In an embodiment, a sensor device comprises a substrate; a first trench in the substrate; a first moveable element suspended in the first trench by a first plurality of support elements spaced apart from one another and arranged at a perimeter of the first moveable element; and a first layer arranged on the substrate to seal the first trench, thereby providing a first cavity containing the first moveable element and the first plurality of support elements.
Abstract translation: 实施例涉及集成电路传感器，更具体地涉及集成在集成电路结构中的传感器和用于产生传感器的方法。 在一个实施例中，传感器装置包括衬底; 衬底中的第一沟槽; 第一可移动元件，其通过彼此间隔开并布置在第一可移动元件的周边的第一多个支撑元件悬挂在第一沟槽中; 以及布置在所述基板上以密封所述第一沟槽的第一层，从而提供包含所述第一可移动元件和所述第一多个支撑元件的第一空腔。
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公开(公告)号：US10683203B2
公开(公告)日：2020-06-16
申请号：US15951489
申请日：2018-04-12
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Steffen Bieselt , Heiko Froehlich , Andre Roeth , Maik Stegemann , Mirko Vogt
Abstract: A microelectromechanical systems (MEMS) device is provided and includes a bulk semiconductor substrate, a cavity formed in the bulk semiconductor substrate, a movably suspended mass, a cap structure and a capacitive structure is shown. The movably suspended mass is defined in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity. The cap is structure arranged on the main surface area of the bulk semiconductor substrate. The capacitive structure comprises a first electrode structure arranged on the movably suspended mass and a second electrode structure arranged at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.
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公开(公告)号：US09896329B2
公开(公告)日：2018-02-20
申请号：US15208975
申请日：2016-07-13
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Alessia Scire , Maik Stegemann , Bernhard Winkler , Andre Roeth , Steffen Bieselt , Mirko Vogt
CPC classification number: B81C1/0015 , B81B3/0078 , B81B2201/0235 , B81B2203/0118 , B81B2203/0163
Abstract: The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.
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公开(公告)号：US20170015546A1
公开(公告)日：2017-01-19
申请号：US15208975
申请日：2016-07-13
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Alessia Scire , Maik Stegemann , Bernhard Winkler , Andre Roeth , Steffen Bieselt , Mirko Vogt
CPC classification number: B81C1/0015 , B81B3/0078 , B81B2201/0235 , B81B2203/0118 , B81B2203/0163
Abstract: The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.
Abstract translation: 本公开涉及一种集成半导体器件，包括半导体衬底; 形成在半导体衬底中的腔; 所述半导体衬底的传感器部分经由所述半导体衬底和所述传感器部分互连的所述半导体衬底的悬置部分在所述空腔的一侧偏转地悬挂在所述空腔中，其中所述悬架部分沿着所述腔的侧面的延伸为 小于腔的所述侧的延伸部。
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Patent Agency Ranking
公开(公告)号：US20200002159A1
公开(公告)日：2020-01-02
申请号：US16024339
申请日：2018-06-29
Applicant: Infineon Technologies Dresden GmbH & Co. KG
Inventor： Horst THEUSS , Bernhard Knott , Thoralf Kautzsch , Mirko Vogt , Maik Stegemann , Andre Roeth , Marco Haubold , Heiko Froehlich , Wolfram Langheinrich , Steffen Bieselt
Abstract: A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.
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公开(公告)号：US10386255B2
公开(公告)日：2019-08-20
申请号：US15647360
申请日：2017-07-12
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Marco Haubold , Andre Roeth , Maik Stegemann , Mirko Vogt
Abstract: A manufacturing method includes providing a semiconductor substrate having a pressure sensor structure; and forming, during a BEOL process (BEOL=back-end-of-line), a metal-insulator-stack arrangement on the semiconductor substrate, wherein the metal-insulator-stack arrangement is formed to comprise (1) a cavity adjacent to the pressure sensor structure and extending over the pressure sensor structure, and (2) a pressure port through the metal-insulator-stack arrangement for providing a fluidic connection between the cavity and an environmental atmosphere, wherein the pressure port has a cross-sectional area, which is smaller than 10% of a footprint area of the pressure sensor structure within the cavity.
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8.发明申请公开(公告)号：US20170089790A1
公开(公告)日：2017-03-30
申请号：US15372992
申请日：2016-12-08
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann , Andre Roeth , Bernhard Winkler , Boris Binder
IPC: G01L9/00
CPC classification number: G01L9/0072 , B81B2201/0264 , B81B2203/0127 , B81C1/00158 , G01L9/0041 , G01L9/0073
Abstract: Embodiments relate to sensors and more particularly to structures for and methods of forming sensors that are easier to manufacture as integrated components and provide improved deflection of a sensor membrane, lamella or other movable element. In embodiments, a sensor comprises a support structure for a lamella, membrane or other movable element. The support structure comprises a plurality of support elements that hold or carry the movable element. The support elements can comprise individual points or feet-like elements, rather than a conventional interconnected frame, that enable improved motion of the movable element, easier removal of a sacrificial layer between the movable element and substrate during manufacture and a more favorable deflection ratio, among other benefits.
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公开(公告)号：US11078072B2
公开(公告)日：2021-08-03
申请号：US16861669
申请日：2020-04-29
Applicant: Infineon Technologies Dresden GmbH & Co. KG
Inventor： Thoralf Kautzsch , Steffen Bieselt , Heiko Froehlich , Andre Roeth , Maik Stegemann , Mirko Vogt
Abstract: A method for manufacturing a microelectromechanical systems (MEMS) device, includes forming a cavity in a bulk semiconductor substrate; defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity; arranging a cap structure on the main surface area of the bulk semiconductor substrate; and forming a capacitive structure. Forming the capacitive structure includes arranging a first electrode structure on the movably suspended mass; and providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.
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公开(公告)号：US10544037B2
公开(公告)日：2020-01-28
申请号：US15875068
申请日：2018-01-19
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Alessia Scire , Maik Stegemann , Bernhard Winkler , Andre Roeth , Steffen Bieselt , Mirko Vogt
Abstract: The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.
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