Invention Grant
- Patent Title: Sense amplifier for a flash memory system
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Application No.: US16117987Application Date: 2018-08-30
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Publication No.: US10546646B2Publication Date: 2020-01-28
- Inventor: Xiaozhou Qiang , Xiao Yan Pi , Kai Man Yue , Li Fang Bian
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: SILICON STORAGE TECHNOLOGY, INC.
- Current Assignee: SILICON STORAGE TECHNOLOGY, INC.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP US
- Priority: CN201810619270 20180615
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/28 ; G11C16/32 ; G11C16/24

Abstract:
An improved low-power sense amplifier for use in a flash memory system is disclosed. The reference bit line and selected bit line are pre-charged during a limited period and with limited power consumed. The pre-charge circuit can be trimmed during a configuration process to further optimize power consumption during the pre-charge operation.
Public/Granted literature
- US20190385685A1 Sense Amplifier For A Flash Memory System Public/Granted day:2019-12-19
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