公开(公告)号：US10546646B2

公开(公告)日：2020-01-28

申请号：US16117987

申请日：2018-08-30

Applicant: Silicon Storage Technology, Inc.

Inventor： Xiaozhou Qiang ,  Xiao Yan Pi ,  Kai Man Yue ,  Li Fang Bian

IPC: G11C16/26 ,  G11C16/28 ,  G11C16/32 ,  G11C16/24

Abstract: An improved low-power sense amplifier for use in a flash memory system is disclosed. The reference bit line and selected bit line are pre-charged during a limited period and with limited power consumed. The pre-charge circuit can be trimmed during a configuration process to further optimize power consumption during the pre-charge operation.