- 专利标题： Methods of forming metal-gate semiconductor devices with enhanced mobility of charge carriers
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申请号： US14986229申请日： 2015-12-31
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公开(公告)号： US10546789B2公开(公告)日： 2020-01-28
- 发明人: John H. Zhang , Chengyu Niu , Heng Yang
- 申请人： STMicroelectronics, Inc.
- 申请人地址： US TX Coppell
- 专利权人： STMICROELECTRONICS, INC.
- 当前专利权人： STMICROELECTRONICS, INC.
- 当前专利权人地址： US TX Coppell
- 代理机构： Seed Intellectual Property Law Group LLP
- 主分类号： H01L21/70
- IPC分类号： H01L21/70 ; H01L21/8238 ; H01L29/423 ; H01L29/49 ; H01L21/28 ; H01L29/78 ; H01L21/285 ; H01L29/417 ; H01L29/66 ; H01L27/092
摘要：
Methods and devices for enhancing mobility of charge carriers. An integrated circuit may include semiconductor devices of two types. The first type of device may include a metallic gate and a channel strained in a first manner. The second type of device may include a metallic gate and a channel strained in a second manner. The gates may include, collectively, three or fewer metallic materials. The gates may share a same metallic material. A method of forming the semiconductor devices on an integrated circuit may include depositing first and second metallic layers in first and second regions of the integrated circuit corresponding to the first and second gates, respectively.
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