- 专利标题： Structures and methods for noise isolation in semiconductor devices
-
申请号： US16035128申请日： 2018-07-13
-
公开(公告)号： US10546937B2公开(公告)日： 2020-01-28
- 发明人: Gulbagh Singh , Tsung-Han Tsai , Kun-Tsang Chuang
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Sterne, Kessler, Goldstein & Fox P.L.L.C.
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/417 ; H01L29/06 ; H01L29/78 ; H01L29/66
摘要：
The present disclosure relates to a semiconductor structure includes a substrate with a top surface and first and second devices formed on the top surface of the substrate. The semiconductor structure also includes a deep isolation structure formed in the substrate and between the first and second devices. The deep isolation structure includes a top portion formed at the top surface and having a top width and a bottom surface having a bottom width larger than the top width.
公开/授权文献
信息查询
IPC分类:
