Embodiments of the disclosure are directed to using a SAM liner to promote electroless deposition of metal for integrated circuit interconnects. The SAM liner can be formed on a dielectric substrate. A protective layer can be formed on the SAM liner. The protective layer can double as a seed layer for electroless deposition of an interconnect metal. The interconnect metal can be deposited on the protective layer using electroless deposition. The dielectric, with the SAM liner, the protective layer, and the interconnect metal can be annealed to reflow the interconnect metal into trenches formed in the dielectric.