- Patent Title: Selective deposition of aluminum and nitrogen containing material
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Application No.: US16158780Application Date: 2018-10-12
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Publication No.: US10553482B2Publication Date: 2020-02-04
- Inventor: Han Wang , Qi Xie , Delphine Longrie , Jan Willem Maes , David de Roest , Julian Hsieh , Chiyu Zhu , Timo Asikainen , Krzysztof Kachel , Harald Profijt
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02 ; H01L21/311 ; H01L23/532 ; C23C16/00
Abstract:
Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.
Public/Granted literature
- US20190103303A1 SELECTIVE DEPOSITION OF ALUMINUM AND NITROGEN CONTAINING MATERIAL Public/Granted day:2019-04-04
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