Invention Grant
- Patent Title: Formation of self-limited inner spacer for gate-all-around nanosheet FET
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Application No.: US15834380Application Date: 2017-12-07
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Publication No.: US10553679B2Publication Date: 2020-02-04
- Inventor: Jingyun Zhang , Takashi Ando , Choonghyun Lee , Alexander Reznicek , Pouya Hashemi
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent L. Jeffrey Kelly, Esq.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L29/786 ; H01L29/423 ; H01L29/45 ; H01L29/417 ; H01L21/02 ; H01L21/306 ; H01L21/324 ; H01L21/223 ; H01L21/321
Abstract:
A semiconductor structure containing a gate-all-around nanosheet field effect transistor having a self-limited inner spacer composed of a rare earth doped germanium dioxide that provides source/drain isolation between rare earth metal silicide ohmic contacts is provided.
Public/Granted literature
- US20190181224A1 FORMATION OF SELF-LIMITED INNER SPACER FOR GATE-ALL-AROUND NANOSHEET FET Public/Granted day:2019-06-13
Information query
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