A vertical Hall element and method of fabricating are disclosed. The method includes forming a buried region having a first conductivity type in a substrate having a second conductivity type and implanting a dopant of the first conductivity type into a well region between the top surface of the substrate and the buried region. The buried region has a doping concentration increasing with an increasing depth from a top surface of the substrate and the well region has a doping concentration decreasing from the top surface of the substrate to the buried region. The method includes forming first through fifth contacts on the well region. First and second contacts define a conductive path and second and third contacts define another conductive path through the well region. The fourth contact is formed between first and second contacts and the fifth contact is formed between second and third contacts.