公开(公告)号：US10109787B2

公开(公告)日：2018-10-23

申请号：US15335726

申请日：2016-10-27

Applicant: Texas Instruments Incorporated

Inventor： Keith Ryan Green ,  Iouri Mirgorodski

IPC: H01L43/06 ,  H01L43/14 ,  H01L21/66

Abstract: A vertical Hall element and method of fabricating are disclosed. The method includes forming a buried region having a first conductivity type in a substrate having a second conductivity type and implanting a dopant of the first conductivity type into a well region between the top surface of the substrate and the buried region. The buried region has a doping concentration increasing with an increasing depth from a top surface of the substrate and the well region has a doping concentration decreasing from the top surface of the substrate to the buried region. The method includes forming first through fifth contacts on the well region. First and second contacts define a conductive path and second and third contacts define another conductive path through the well region. The fourth contact is formed between first and second contacts and the fifth contact is formed between second and third contacts.

公开(公告)号：US10534045B2

公开(公告)日：2020-01-14

申请号：US15709866

申请日：2017-09-20

Applicant: Texas Instruments Incorporated

Inventor： Keith Ryan Green ,  Byron Jon Roderick Shulver ,  Iouri Mirgorodski

IPC: G01R33/07 ,  G01R33/00 ,  H01L43/14 ,  H01L27/22 ,  G01D5/14

Abstract: A microelectronic device includes a vertical Hall sensor for measuring magnetic fields in two dimensions. In one implementation, the disclosed microelectronic device involves a vertical Hall plate with a cross-shaped upper terminal and a lower terminal which includes a buried layer. The cross-shaped upper terminal has a length-to-width ratio of 5 to 12 where it contacts the vertical Hall plate. The length is measured from one end of one arm of the cross-shaped upper terminal to an opposite end of an opposite arm. The width is an average width of both arms. Hall sense taps are located outside of the cross-shaped upper terminal. Current returns connect to the buried layer.

公开(公告)号：US10135415B2

公开(公告)日：2018-11-20

申请号：US14973958

申请日：2015-12-18

Applicant: Texas Instruments Incorporated

Inventor： Joel Soman ,  Iouri Mirgorodski ,  Nicholas Stephen Dellas

IPC: H03H3/007 ,  H03H3/04 ,  G01H13/00

Abstract: A method of tuning the resonant frequency of embedded bulk acoustic resonators during manufacturing of an integrated circuit. The rate of change in the resonant frequency of BAWs vs rate of change in top electrode thickness is determined and used to tune the resonant frequency of embedded bulk acoustic resonators during integrated circuit manufacturing.

公开(公告)号：US10553784B2

公开(公告)日：2020-02-04

申请号：US16147007

申请日：2018-09-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Keith Ryan Green ,  Iouri Mirgorodski

IPC: H01L43/06 ,  H01L43/14 ,  H01L21/66

Abstract: A vertical Hall element and method of fabricating are disclosed. The method includes forming a buried region having a first conductivity type in a substrate having a second conductivity type and implanting a dopant of the first conductivity type into a well region between the top surface of the substrate and the buried region. The buried region has a doping concentration increasing with an increasing depth from a top surface of the substrate and the well region has a doping concentration decreasing from the top surface of the substrate to the buried region. The method includes forming first through fifth contacts on the well region. First and second contacts define a conductive path and second and third contacts define another conductive path through the well region. The fourth contact is formed between first and second contacts and the fifth contact is formed between second and third contacts.

公开(公告)号：US20190086484A1

公开(公告)日：2019-03-21

申请号：US15709866

申请日：2017-09-20

Applicant: Texas Instruments Incorporated

Inventor： Keith Ryan Green ,  Byron Jon Roderick Shulver ,  Iouri Mirgorodski

IPC: G01R33/07 ,  G01R33/00 ,  G01D5/14 ,  H01L27/22 ,  H01L43/14

Abstract: A microelectronic device includes a vertical Hall sensor for measuring magnetic fields in two dimensions. In one implementation, the disclosed microelectronic device involves a vertical Hall plate with a cross-shaped upper terminal and a lower terminal which includes a buried layer. The cross-shaped upper terminal has a length-to-width ratio of 5 to 12 where it contacts the vertical Hall plate. The length is measured from one end of one arm of the cross-shaped upper terminal to an opposite end of an opposite arm. The width is an average width of both arms. Hall sense taps are located outside of the cross-shaped upper terminal. Current returns connect to the buried layer.

公开(公告)号：US20170179914A1

公开(公告)日：2017-06-22

申请号：US14973958

申请日：2015-12-18

Applicant: Texas Instruments Incorporated

Inventor： Joel Soman ,  Iouri Mirgorodski ,  Nicholas Stephen Dellas

IPC: H03H3/04 ,  G01H13/00

CPC classification number: H03H3/04 ,  G01H13/00 ,  H03H2003/0428

Abstract: A method of tuning the resonant frequency of embedded bulk acoustic resonators during manufacturing of an integrated circuit. The rate of change in the resonant frequency of BAWs vs rate of change in top electrode thickness is determined and used to tune the resonant frequency of embedded bulk acoustic resonators during integrated circuit manufacturing.