Invention Grant
- Patent Title: Perpendicularly magnetized spin-orbit magnetic device
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Application No.: US16219980Application Date: 2018-12-14
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Publication No.: US10553788B2Publication Date: 2020-02-04
- Inventor: Hsin-Han Lee , Shan-Yi Yang , Yu-Sheng Chen , Yao-Jen Chang
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: TW105124742A 20160804
- Main IPC: H01L43/08
- IPC: H01L43/08 ; G11C11/18 ; G11C11/16 ; H01L43/02 ; H01L43/10

Abstract:
A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The first stray field applying layer provides a stray magnetic field parallel to a film plane. The first antiferromagnetic layer contacts the first stray field applying layer to define the direction of the magnetic moment in the first stray field applying layer.
Public/Granted literature
- US20190123265A1 PERPENDICULARLY MAGNETIZED SPIN-ORBIT MAGNETIC DEVICE Public/Granted day:2019-04-25
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