Invention Grant
- Patent Title: Storage device including multi data rate memory device and memory controller
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Application No.: US16140066Application Date: 2018-09-24
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Publication No.: US10559336B2Publication Date: 2020-02-11
- Inventor: Hyeon-Wu Kim , Seok-Won Ahn , Chan-Ho Yoon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2017-0148321 20171108
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/22 ; G06F12/02 ; H03L7/081 ; G06F5/08 ; G06F13/16 ; G06F1/08 ; G06F1/12

Abstract:
A memory controller is used to control a first storage block having a first data rate and a second storage block having a second data rate. The memory controller includes; a memory interface that transceives a data signal and a data strobe signal with the first and second storage blocks, and a sub controller that stores access information about the first data rate and the second data rate. The sub controller may include a delay lookup table storing access information including first strobe adjustment timing information defining a first data strobe signal provided to the first storage block, and second strobe adjustment timing information defining a second data strobe signal provided to the second storage block.
Public/Granted literature
- US20190139588A1 STORAGE DEVICE INCLUDING MULTI DATA RATE MEMORY DEVICE AND MEMORY CONTROLLER Public/Granted day:2019-05-09
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