Invention Grant
- Patent Title: Seamless tungsten fill by tungsten oxidation-reduction
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Application No.: US16006402Application Date: 2018-06-12
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Publication No.: US10559497B2Publication Date: 2020-02-11
- Inventor: Yong Wu , Yihong Chen , Shishi Jiang , Ziqing Duan , Abhijit Basu Mallick , Srinivas Gandikota
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/768 ; H01L21/285 ; H01L23/532 ; H01L21/02
Abstract:
Methods for filling a substrate feature with a seamless tungsten fill are described. The methods include depositing a tungsten film, oxidizing the tungsten film to a tungsten oxide pillar, reducing the tungsten oxide film to a seamless tungsten gapfill and optionally depositing additional tungsten on the tungsten gapfill.
Public/Granted literature
- US20180358264A1 Seamless Tungsten Fill By Tungsten Oxidation-Reduction Public/Granted day:2018-12-13
Information query
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