中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

27 records (took 0.013 seconds)

    Flowable film formation and treatments
    1.
    发明授权
    Flowable film formation and treatments 有权

    公开(公告)号：US11615966B2

    公开(公告)日：2023-03-28

    申请号：US16932801

    申请日：2020-07-19

    Applicant: Applied Materials, Inc.

    Inventor： Shishi Jiang ,  Praket Prakash Jha ,  Abhijit Basu Mallick

    IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/3065

    Abstract: Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The semiconductor substrate may define a feature within the semiconductor substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. A bias power may be applied to the substrate support from a bias power source. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.

    Selectively deposited parylene masks and methods related thereto
    5.
    发明授权
    Selectively deposited parylene masks and methods related thereto 有权

    公开(公告)号：US10714339B2

    公开(公告)日：2020-07-14

    申请号：US16246776

    申请日：2019-01-14

    Applicant: Applied Materials, Inc.

    Inventor： Fei Wang ,  Miaojun Wang ,  Pramit Manna ,  Shishi Jiang ,  Abhijit Basu Mallick ,  Robert Jan Visser

    IPC: H01L21/027 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/32 ,  H01L21/311

    Abstract: Methods of selectively depositing a mask layer on a surface of a patterned substrate and self-aligned patterned masks are provided herein. In one embodiment, a method of selectivity depositing a mask layer includes positioning the patterned substrate on a substrate support in a processing volume of a processing chamber, exposing the surface of the patterned substrate to a parylene monomer gas, forming a first layer on the patterned substrate, wherein the first layer comprises a patterned parylene layer, and depositing a second layer on the first layer. In another embodiment, a self-aligned patterned mask comprises a parylene layer comprising a plurality of parylene features and a plurality of openings, the parylene layer is disposed on a patterned substrate comprising a dielectric layer and a plurality of metal features, the plurality of metal feature comprise a parylene deposition inhibitor metal, and the plurality of parylene features are selectivity formed on dielectric surfaces of the dielectric layer.

    FLOWABLE FILM FORMATION AND TREATMENTS
    8.
    发明申请
    FLOWABLE FILM FORMATION AND TREATMENTS 有权

    公开(公告)号：US20220020594A1

    公开(公告)日：2022-01-20

    申请号：US16932801

    申请日：2020-07-19

    Applicant: Applied Materials, Inc.

    Inventor： Shishi Jiang ,  Praket Prakash Jha ,  Abhijit Basu Mallick

    IPC: H01L21/311 ,  H01L21/02

    Abstract: Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The semiconductor substrate may define a feature within the semiconductor substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. A bias power may be applied to the substrate support from a bias power source. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.

    Controlled growth of thin silicon oxide film at low temperature
    9.
    发明授权
    Controlled growth of thin silicon oxide film at low temperature 有权

    公开(公告)号：US10818490B2

    公开(公告)日：2020-10-27

    申请号：US16201095

    申请日：2018-11-27

    Applicant: Applied Materials, Inc.

    Inventor： Shishi Jiang ,  Kurtis Leschkies ,  Pramit Manna ,  Abhijit Basu Mallick ,  Steven Verhaverbeke

    IPC: H01L21/02 ,  C23C8/10 ,  H01L21/321 ,  H01L21/67 ,  H01L21/677

    Abstract: Implementations described herein generally relate to methods for forming a low-k dielectric material on a semiconductor substrate. More specifically, implementations described herein relate to methods of forming a silicon oxide film at high pressure and low temperatures. In one implementation, a method of forming a silicon oxide film is provided. The method comprises loading a substrate having a silicon-containing film formed thereon into a processing region of a high-pressure vessel. The method further comprises forming a silicon oxide film on the silicon-containing film. Forming the silicon oxide film on the silicon-containing film comprises exposing the silicon-containing film to a processing gas comprising steam at a pressure greater than about 1 bar and maintaining the high-pressure vessel at a temperature between about 100 degrees Celsius and about 500 degrees Celsius.

    Two-step process for gapfilling high aspect ratio trenches with amorphous silicon film
    10.
    发明授权
    Two-step process for gapfilling high aspect ratio trenches with amorphous silicon film 有权

    公开(公告)号：US10699903B2

    公开(公告)日：2020-06-30

    申请号：US16659194

    申请日：2019-10-21

    Applicant: Applied Materials, Inc.

    Inventor： Pramit Manna ,  Shishi Jiang ,  Rui Cheng ,  Abhijit Basu Mallick

    IPC: H01L21/00 ,  H01L21/02 ,  H01L21/762 ,  H01L29/06

    Abstract: Methods for gapfilling semiconductor device features, such as high aspect ratio trenches, with amorphous silicon film are provided. First, a substrate having features formed in a first surface thereof is positioned in a processing chamber. A conformal deposition process is then performed to deposit a conformal silicon liner layer on the sidewalls of the features and the exposed first surface of the substrate between the features. A flowable deposition process is then performed to deposit a flowable silicon layer over the conformal silicon liner layer. A curing process is then performed to increase silicon density of the flowable silicon layer. Methods described herein generally improve overall etch selectivity by the conformal silicon deposition and the flowable silicon deposition two-step process to realize seam-free gapfilling between features with high quality amorphous silicon film.

Patent Agency Ranking