- 专利标题： Methods, apparatus and system for a passthrough-based architecture
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申请号： US15728445申请日： 2017-10-09
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公开(公告)号： US10559503B2公开(公告)日： 2020-02-11
- 发明人: Guillaume Bouche , Tuhin Guha Neogi , Andy Chi-Hung Wei , Jia Zeng , Jongwook Kye , Jason Eugene Stephens , Irene Yuh-Ling Lin , Sudharshanan Raghunathan , Lei Yuan
- 申请人： GLOBALFOUNDRIES INC.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Williams Morgan, P.C.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/8238 ; H01L21/8234 ; H01L21/027 ; H01L27/092 ; G06F17/50 ; H01L21/768 ; H01L27/088
摘要：
At least one method, apparatus and system disclosed herein for forming a finFET device having a pass-through structure. A first gate structure and a second gate structure are formed on a semiconductor wafer. A first active area is formed on one end of the first and second gate structures. A second active area is formed on the other end of the first and second gate structures. A trench silicide (TS) structure self-aligned to the first and second gate structures is formed. The TS structure is configured to operatively couple the first active area to the second active area.
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