公开(公告)号：US20170263506A1

公开(公告)日：2017-09-14

申请号：US15067953

申请日：2016-03-11

申请人： GLOBALFOUNDRIES INC.

发明人： Guillaume Bouche ,  Tuhin Guha Neogi ,  Andy Chi-Hung Wei ,  Jia Zeng ,  Jongwook Kye ,  Jason Eugene Stephens ,  Irene Yuh-Ling Lin ,  Sudharshanan Raghunathan ,  Lei Yuan

IPC分类号： H01L21/8238 ,  H01L21/768 ,  G06F17/50 ,  H01L21/027 ,  H01L27/092 ,  H01L23/535 ,  H01L21/8234 ,  H01L21/285

CPC分类号： H01L21/823871 ,  G06F17/5072 ,  H01L21/027 ,  H01L21/28518 ,  H01L21/76897 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823821 ,  H01L23/535 ,  H01L27/0886 ,  H01L27/0924

摘要： At least one method, apparatus and system disclosed herein for forming a finFET device having a pass-through structure. A first gate structure and a second gate structure are formed on a semiconductor wafer. A first active area is formed on one end of the first and second gate structures. A second active area is formed on the other end of the first and second gate structures. A trench silicide (TS) structure self-aligned to the first and second gate structures is formed. The TS structure is configured to operatively couple the first active area to the second active area.

公开(公告)号：US20170263715A1

公开(公告)日：2017-09-14

申请号：US15067540

申请日：2016-03-11

申请人： GLOBALFOUNDRIES INC.

发明人： Guillaume Bouche ,  Tuhin Guha Neogi ,  Sudharshanan Raghunathan ,  Andy Chi-Hung Wei ,  Jason Eugene Stephens ,  Vikrant Kumar Chauhan ,  David Michael Permana

IPC分类号： H01L29/40 ,  H01L29/66 ,  H01L21/768 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/027 ,  H01L29/49 ,  H01L21/311

CPC分类号： H01L29/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0273 ,  H01L21/31055 ,  H01L21/31111 ,  H01L21/76816 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L29/4966 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66795

摘要： At least one method, apparatus and system disclosed herein for forming a finFET device. A gate structure comprising a gate spacer on a semiconductor wafer is formed. A self-aligned contact (SAC) cap is formed over the gate structure. A TS structure is formed. At least one M0 metal structure void is formed. At least one CB structure void adjacent the M0 metal structure void is formed. An etch process is performed the M0 and CB structures voids to the gate structure. At least one CA structure void adjacent the CB structure void is formed. The M0, CB, and CA structure voids are metallized.

公开(公告)号：US10236350B2

公开(公告)日：2019-03-19

申请号：US15067540

申请日：2016-03-11

申请人： GLOBALFOUNDRIES INC.

发明人： Guillaume Bouche ,  Tuhin Guha Neogi ,  Sudharshanan Raghunathan ,  Andy Chi-Hung Wei ,  Jason Eugene Stephens ,  Vikrant Kumar Chauhan ,  David Michael Permana

IPC分类号： H01L29/40 ,  H01L29/49 ,  H01L29/66 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/027 ,  H01L21/768

摘要： At least one method, apparatus and system disclosed herein for forming a finFET device. A gate structure comprising a gate spacer on a semiconductor wafer is formed. A self-aligned contact (SAC) cap is formed over the gate structure. A TS structure is formed. At least one M0 metal structure void is formed. At least one CB structure void adjacent the M0 metal structure void is formed. An etch process is performed the M0 and CB structures voids to the gate structure. At least one CA structure void adjacent the CB structure void is formed. The M0, CB, and CA structure voids are metallized.

公开(公告)号：US10559503B2

公开(公告)日：2020-02-11

申请号：US15728445

申请日：2017-10-09

申请人： GLOBALFOUNDRIES INC.

发明人： Guillaume Bouche ,  Tuhin Guha Neogi ,  Andy Chi-Hung Wei ,  Jia Zeng ,  Jongwook Kye ,  Jason Eugene Stephens ,  Irene Yuh-Ling Lin ,  Sudharshanan Raghunathan ,  Lei Yuan

IPC分类号： H01L21/00 ,  H01L21/8238 ,  H01L21/8234 ,  H01L21/027 ,  H01L27/092 ,  G06F17/50 ,  H01L21/768 ,  H01L27/088

摘要： At least one method, apparatus and system disclosed herein for forming a finFET device having a pass-through structure. A first gate structure and a second gate structure are formed on a semiconductor wafer. A first active area is formed on one end of the first and second gate structures. A second active area is formed on the other end of the first and second gate structures. A trench silicide (TS) structure self-aligned to the first and second gate structures is formed. The TS structure is configured to operatively couple the first active area to the second active area.

公开(公告)号：US20180033701A1

公开(公告)日：2018-02-01

申请号：US15728445

申请日：2017-10-09

申请人： GLOBALFOUNDRIES INC.

发明人： Guillaume Bouche ,  Tuhin Guha Neogi ,  Andy Chi-Hung Wei ,  Jia Zeng ,  Jongwook Kye ,  Jason Eugene Stephens ,  Irene Yuh-Ling Lin ,  Sudharshanan Raghunathan ,  Lei Yuan

IPC分类号： H01L21/8238 ,  H01L23/535 ,  H01L21/027 ,  G06F17/50 ,  H01L21/768 ,  H01L21/285 ,  H01L27/092 ,  H01L21/8234

摘要： At least one method, apparatus and system disclosed herein for forming a finFET device having a pass-through structure. A first gate structure and a second gate structure are formed on a semiconductor wafer. A first active area is formed on one end of the first and second gate structures. A second active area is formed on the other end of the first and second gate structures. A trench silicide (TS) structure self-aligned to the first and second gate structures is formed. The TS structure is configured to operatively couple the first active area to the second active area.

公开(公告)号：US09818651B2

公开(公告)日：2017-11-14

申请号：US15067953

申请日：2016-03-11

申请人： GLOBALFOUNDRIES INC.

发明人： Guillaume Bouche ,  Tuhin Guha Neogi ,  Andy Chi-Hung Wei ,  Jia Zeng ,  Jongwook Kye ,  Jason Eugene Stephens ,  Irene Yuh-Ling Lin ,  Sudharshanan Raghunathan ,  Lei Yuan

IPC分类号： H01L21/00 ,  H01L21/8238 ,  H01L21/8234 ,  H01L21/768 ,  H01L21/285 ,  H01L21/027 ,  H01L27/092 ,  H01L23/535 ,  G06F17/50

CPC分类号： H01L21/823871 ,  G06F17/5072 ,  H01L21/027 ,  H01L21/28518 ,  H01L21/76897 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823821 ,  H01L23/535 ,  H01L27/0886 ,  H01L27/0924

摘要： At least one method, apparatus and system disclosed herein for forming a finFET device having a pass-through structure. A first gate structure and a second gate structure are formed on a semiconductor wafer. A first active area is formed on one end of the first and second gate structures. A second active area is formed on the other end of the first and second gate structures. A trench silicide (TS) structure self-aligned to the first and second gate structures is formed. The TS structure is configured to operatively couple the first active area to the second active area.