- Patent Title: Methods, apparatus and system for a passthrough-based architecture
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Application No.: US15728445Application Date: 2017-10-09
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Publication No.: US10559503B2Publication Date: 2020-02-11
- Inventor: Guillaume Bouche , Tuhin Guha Neogi , Andy Chi-Hung Wei , Jia Zeng , Jongwook Kye , Jason Eugene Stephens , Irene Yuh-Ling Lin , Sudharshanan Raghunathan , Lei Yuan
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/8238 ; H01L21/8234 ; H01L21/027 ; H01L27/092 ; G06F17/50 ; H01L21/768 ; H01L27/088
Abstract:
At least one method, apparatus and system disclosed herein for forming a finFET device having a pass-through structure. A first gate structure and a second gate structure are formed on a semiconductor wafer. A first active area is formed on one end of the first and second gate structures. A second active area is formed on the other end of the first and second gate structures. A trench silicide (TS) structure self-aligned to the first and second gate structures is formed. The TS structure is configured to operatively couple the first active area to the second active area.
Public/Granted literature
- US20180033701A1 METHODS, APPARATUS AND SYSTEM FOR A PASSTHROUGH-BASED ARCHITECTURE Public/Granted day:2018-02-01
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