Invention Grant
- Patent Title: Integrated circuit device and method of manufacturing the same
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Application No.: US16288727Application Date: 2019-02-28
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Publication No.: US10559565B2Publication Date: 2020-02-11
- Inventor: Jung-han Lee , Sun-ghil Lee , Myung-il Kang , Jeong-yun Lee , Seung-hun Lee , Hyun-jung Lee , Sun-wook Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2016-0180140 20161227
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L27/11 ; H01L29/06 ; H01L21/8234 ; H01L27/02

Abstract:
An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.
Public/Granted literature
- US20190198497A1 INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-06-27
Information query
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