SEMICONDUCTOR DEVICE
    2.
    发明申请

    公开(公告)号:US20200020774A1

    公开(公告)日:2020-01-16

    申请号:US16453347

    申请日:2019-06-26

    Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.

    Integrated circuit devices and method of manufacturing the same

    公开(公告)号:US11551972B2

    公开(公告)日:2023-01-10

    申请号:US17173784

    申请日:2021-02-11

    Abstract: An integrated circuit device includes a fin-type active region extending on a substrate in a first direction parallel to a top surface of the substrate; a gate structure extending on the fin-type active region and extending in a second direction parallel to the top surface of the substrate and different from the first direction; and source/drain regions in a recess region extending from one side of the gate structure into the fin-type active region, the source/drain regions including an upper semiconductor layer on an inner wall of the recess region, having a first impurity concentration, and including a gap; and a gap-fill semiconductor layer, which fills the gap and has a second impurity concentration that is greater than the first impurity concentration.

    Integrated circuit devices and method of manufacturing the same

    公开(公告)号:US10714387B2

    公开(公告)日:2020-07-14

    申请号:US16275942

    申请日:2019-02-14

    Abstract: An integrated circuit device includes a fin-type active region extending on a substrate in a first direction parallel to a top surface of the substrate; a gate structure extending on the fin-type active region and extending in a second direction parallel to the top surface of the substrate and different from the first direction; and source/drain regions in a recess region extending from one side of the gate structure into the fin-type active region, the source/drain regions including an upper semiconductor layer on an inner wall of the recess region, having a first impurity concentration, and including a gap; and a gap-fill semiconductor layer, which fills the gap and has a second impurity concentration that is greater than the first impurity concentration.

    Automatic detection method of video wall arrangement and video wall system using the same
    9.
    发明授权
    Automatic detection method of video wall arrangement and video wall system using the same 有权
    视频墙布置和视频墙系统的自动检测方法使用相同

    公开(公告)号:US09354840B2

    公开(公告)日:2016-05-31

    申请号:US13710734

    申请日:2012-12-11

    Abstract: An automatic detection method of an arrangement of a video wall including a plurality of monitors and a video wall system are provided. The method includes: calling, by a control computer, identification information of a first monitor of the plurality of monitors; sending, by the first monitor, a response signal to the control computer and sending, by a second monitor which does not correspond to the called identification information, a detecting signal including a received direction of the response signal to the control computer; and receiving, by the control computer, the detecting signal, and determining the arrangement of the plurality of monitors according to the received detecting signal.

    Abstract translation: 提供了包括多个监视器和视频墙系统的视频墙的布置的自动检测方法。 该方法包括:由控制计算机调用多个监视器的第一监视器的识别信息; 由所述第一监视器向所述控制计算机发送响应信号,并通过与所述被叫识别信息不对应的第二监视器向所述控制计算机发送包括响应信号的接收方向的检测信号; 以及由所述控制计算机接收所述检测信号,以及根据所接收的检测信号确定所述多个监视器的配置。

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