Invention Grant
- Patent Title: Apparatus and methods to create a buffer to reduce leakage in microelectronic transistors
-
Application No.: US15504171Application Date: 2014-09-19
-
Publication No.: US10559683B2Publication Date: 2020-02-11
- Inventor: Chandra S. Mohapatra , Anand S. Murthy , Glenn A. Glass , Tahir Ghani , Willy Rachmady , Gilbert Dewey , Matthew V. Metz , Jack T. Kavalieros
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal LLP
- International Application: PCT/US2014/056528 WO 20140919
- International Announcement: WO2016/043770 WO 20160324
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/786 ; H01L29/10 ; H01L21/762 ; H01L29/06 ; H01L29/66 ; H01L29/201 ; H01L29/423
Abstract:
Transistor devices having a buffer between an active channel and a substrate, which may include the active channel comprising a low band-gap material on a sub-structure, e.g. a buffer, between the active channel and the substrate. The sub-structure may comprise a high band-gap material having a desired conduction band offset, such that leakage may be arrested without significant impact on electronic mobility within the active channel. In an embodiment, the active channel and the sub-structure may be formed in a narrow trench, such that defects due to lattice mismatch between the active channel and the sub-structure are terminated in the sub-structure. In a further embodiment, the sub-structure may be removed to form either a void between the active channel and the substrate, or an insulative material may be disposed between the active channel and the substrate, such that the void or the insulative material form an insulative buffer.
Public/Granted literature
- US20170278964A1 APPARATUS AND METHODS TO CREATE A BUFFER TO REDUCE LEAKAGE IN MICROELECTRONIC TRANSISTORS Public/Granted day:2017-09-28
Information query
IPC分类:
