Provided is a pattern forming method including the successive steps of: a resist film forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive composition; an exposure step of exposing the resist film; a step of developing the exposed resist film using a developer, and a step of rinsing the developed resist film using a rinsing liquid containing an organic solvent. The developer includes a ketone-based or ether-based solvent having a branched alkyl group. The organic solvent contained in the rinsing liquid includes an ether-based solvent having a branched alkyl group.