Method of forming patterns
    7.
    发明授权

    公开(公告)号:US08852847B2

    公开(公告)日:2014-10-07

    申请号:US14074156

    申请日:2013-11-07

    Inventor: Hideaki Tsubaki

    CPC classification number: G03F7/2041 G03F7/0392 G03F7/325

    Abstract: A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film having a receding contact angle of 70 degrees or above with respect to water, wherein the resist composition for negative development contains a resin capable of increasing the polarity by the action of an acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) exposing the resist film via an immersion medium, and (c) performing development with a negative developer.

Patent Agency Ranking