Invention Grant
- Patent Title: MIM capacitor containing negative capacitance material
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Application No.: US15724147Application Date: 2017-10-03
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Publication No.: US10566413B2Publication Date: 2020-02-18
- Inventor: Ye Lu , Junjing Bao , Bin Yang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/321 ; H01L21/768 ; H01L27/11502 ; H01L27/108 ; H01L29/66 ; H01L23/522 ; H01L29/94 ; H01L27/08
Abstract:
A capacitor may include a first conductive layer forming a first capacitor plate, a second conductive layer forming a second capacitor plate, and a first insulating material on the first conductive layer. The first insulating material may include a positive capacitance material. The capacitor may further include a second insulating material disposed over the first insulating material and between the first insulating material and the second conductive layer. The second insulating material may include a negative capacitance ferroelectric material.
Public/Granted literature
- US20190103459A1 MIM CAPACITOR CONTAINING NEGATIVE CAPACITANCE MATERIAL Public/Granted day:2019-04-04
Information query
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