Invention Grant
- Patent Title: Piezoelectric vacuum transistor
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Application No.: US15418807Application Date: 2017-01-30
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Publication No.: US10573482B2Publication Date: 2020-02-25
- Inventor: Qing Cao , Kangguo Cheng , Zhengwen Li , Fei Liu
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01J21/08
- IPC: H01J21/08 ; H01L41/047 ; H01L41/09 ; H01L41/29 ; H01J19/42 ; H01J9/39 ; H01J9/18

Abstract:
A vacuum transistor includes a substrate and a first terminal formed on the substrate. A piezoelectric element has a second terminal formed on the piezoelectric element, wherein the piezoelectric element is provided over the first terminal to provide a gap between the first terminal and the second terminal. The gap is adjusted in accordance with an electrical field on the piezoelectric element.
Public/Granted literature
- US20180218871A1 PIEZOELECTRIC VACUUM TRANSISTOR Public/Granted day:2018-08-02
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