Invention Grant
- Patent Title: Method of etching a three-dimensional dielectric layer
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Application No.: US16233948Application Date: 2018-12-27
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Publication No.: US10573529B2Publication Date: 2020-02-25
- Inventor: Nicolas Posseme , Sebastien Barnola
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1763234 20171227
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L29/66
Abstract:
A method for etching a dielectric layer covering at least one top and at least one flank of a semi-conductive material-based structure is provided, including a plurality of sequences, each including successive steps of: a first etching of the layer by plasma using a chemistry including at least a first fluorine-based compound and a second compound chosen from SiwCl(2w+2) and SiwF(2w+2), w, x, y, and z being whole numbers, and oxygen, the first etching: interrupting before complete consumption of the dielectric layer thickness on the flank and after complete consumption of the thickness on the top, and forming a first protective layer on the top and a second protective layer on the flank; and a second etching fully removing the second layer while conserving a portion of the first layer thickness, each sequence being repeated until complete removal of the dielectric layer on the flank.
Public/Granted literature
- US20190214266A1 METHOD OF ETCHING A THREE-DIMENSIONAL DIELECTRIC LAYER Public/Granted day:2019-07-11
Information query
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