Invention Grant
- Patent Title: Pattern forming method, resist pattern, and process for producing electronic device
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Application No.: US15470113Application Date: 2017-03-27
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Publication No.: US10578968B2Publication Date: 2020-03-03
- Inventor: Kei Yamamoto , Naohiro Tango , Naoki Inoue , Michihiro Shirakawa , Akiyoshi Goto
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2014-202626 20140930
- Main IPC: G03F7/11
- IPC: G03F7/11 ; G03F7/039 ; G03F7/004 ; G03F7/32 ; G03F7/038 ; G03F7/38 ; C08F220/18 ; C08F220/28 ; G03F7/09 ; G03F7/16 ; G03F7/20 ; G03F7/40 ; H01L21/027

Abstract:
The present invention has an object to provide a pattern forming method capable of providing good DOF and EL, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a hydrophobic resin.
Public/Granted literature
- US20170199461A1 PATTERN FORMING METHOD, RESIST PATTERN, AND PROCESS FOR PRODUCING ELECTRONIC DEVICE Public/Granted day:2017-07-13
Information query
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