公开(公告)号：US10175578B2

公开(公告)日：2019-01-08

申请号：US15446695

申请日：2017-03-01

Applicant: FUJIFILM Corporation

Inventor： Naoki Inoue ,  Naohiro Tango ,  Kei Yamamoto ,  Michihiro Shirakawa ,  Akiyoshi Goto

IPC: G03F7/11 ,  G03F7/038 ,  G03F7/039 ,  C09D133/08 ,  G03F7/09 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40 ,  C08F2/48 ,  C08F220/18 ,  C09D133/10

Abstract: A pattern forming method includes coating an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form an actinic ray-sensitive or radiation-sensitive film, coating a composition for forming a protective film onto the actinic ray-sensitive or radiation-sensitive film to form a protective film, exposing the actinic ray-sensitive or radiation-sensitive film covered with the protective film, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, in which the protective film contains a compound (A) including at least one group or bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond, and an ester bond, and a resin (X).

公开(公告)号：US11249395B2

公开(公告)日：2022-02-15

申请号：US15994521

申请日：2018-05-31

Applicant: FUJIFILM Corporation

Inventor： Naoki Inoue ,  Naohiro Tango ,  Michihiro Shirakawa ,  Akiyoshi Goto

IPC: G03F7/11 ,  G03F7/20 ,  G03F7/09 ,  C08F220/16 ,  C08F220/28 ,  G03F7/16 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

Abstract: One embodiment of the present invention provides a pattern forming method including a step for forming an actinic ray-sensitive or radiation-sensitive film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, a step for forming an upper layer film on the actinic ray-sensitive or radiation-sensitive film using a composition for forming an upper layer film, a step for exposing a laminate film including the actinic ray-sensitive or radiation-sensitive film and the upper layer film, and a step for developing the exposed laminate film using a developer including an organic solvent. The composition for forming an upper layer film contains a resin (XA), a resin (XB) containing fluorine atoms, a basic compound (XC), and a solvent (XD), and the resin (XA) is a resin not containing fluorine atoms, or in a case where the resin (XA) contains fluorine atoms, the resin (XA) is a resin having a lower content of fluorine atoms than that in the resin (XB), based on a mass.

公开(公告)号：US10578968B2

公开(公告)日：2020-03-03

申请号：US15470113

申请日：2017-03-27

Applicant: FUJIFILM Corporation

Inventor： Kei Yamamoto ,  Naohiro Tango ,  Naoki Inoue ,  Michihiro Shirakawa ,  Akiyoshi Goto

IPC: G03F7/11 ,  G03F7/039 ,  G03F7/004 ,  G03F7/32 ,  G03F7/038 ,  G03F7/38 ,  C08F220/18 ,  C08F220/28 ,  G03F7/09 ,  G03F7/16 ,  G03F7/20 ,  G03F7/40 ,  H01L21/027

Abstract: The present invention has an object to provide a pattern forming method capable of providing good DOF and EL, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a hydrophobic resin.

公开(公告)号：US09470980B2

公开(公告)日：2016-10-18

申请号：US14228894

申请日：2014-03-28

Applicant: FUJIFILM Corporation

Inventor： Naoki Inoue ,  Hiroo Takizawa ,  Shuji Hirano ,  Hideaki Tsubaki

IPC: G03F7/20 ,  C08F212/14 ,  G03C1/73 ,  G03F7/004 ,  G03F7/039 ,  G03F7/075 ,  G03F7/32 ,  C08F12/24

CPC classification number: G03F7/2002 ,  C08F12/24 ,  C08F212/14 ,  G03C1/733 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/2039 ,  G03F7/2041 ,  G03F7/325 ,  C08F212/32

Abstract: A pattern-forming method includes in this order: step (1) of forming a film with an electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition that contains (A) a resin having an acid-decomposable repeating unit and capable of decreasing a solubility of the resin (A) in a developer containing an organic solvent by an action of an acid, (B) a compound capable of generating an acid upon irradiation with an electron beam or extreme ultraviolet radiation, (C) a resin having one or more groups selected from the specific group as defined in the specification and (D) a solvent; step (2) of exposing the film with an electron beam or extreme ultraviolet radiation; and step (4) of developing the film with a developer containing an organic solvent after the exposing to form a negative pattern.

Abstract translation: 图案形成方法包括以下顺序：用电子束敏感或极紫外线辐射敏感性树脂组合物形成膜的步骤（1），其包含（A）具有酸分解重复单元并能够降低的树脂 树脂（A）在含有有机溶剂的显影剂中的溶解度，（B）在电子束或极紫外线照射时能够产生酸的化合物，（C）具有一个 或更多选自本说明书中定义的特定基团的基团和（D）溶剂; 步骤（2），用电子束或极紫外线辐射曝光胶片; 以及在暴露之后用含有机溶剂的显影剂显影该膜以形成负图案的步骤（4）。

公开(公告)号：US11281103B2

公开(公告)日：2022-03-22

申请号：US15700518

申请日：2017-09-11

Applicant: FUJIFILM Corporation

Inventor： Naoya Hatakeyama ,  Naoki Inoue ,  Naohiro Tango ,  Michihiro Shirakawa ,  Akiyoshi Goto

IPC: G03F7/11 ,  G03F7/20 ,  C08F20/36 ,  C08K5/32 ,  C08L33/10 ,  C08L33/16 ,  C08L101/00 ,  C08F26/02 ,  G03F7/32 ,  C09D133/04 ,  H01L21/027 ,  G03F7/38 ,  G03F7/039 ,  C08K5/33

Abstract: A composition for forming an upper layer film is applied onto a resist film formed using an actinic ray-sensitive or radiation-sensitive resin composition, and includes a resin X and a compound A having a radical trapping group. A pattern forming method includes applying an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, applying the composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, exposing the resist film having the upper layer film formed thereon, and developing the exposed resist film using a developer including an organic solvent to form a pattern.

公开(公告)号：US10852637B2

公开(公告)日：2020-12-01

申请号：US15823593

申请日：2017-11-28

Applicant: FUJIFILM Corporation

Inventor： Naoki Inoue ,  Naohiro Tango ,  Kei Yamamoto ,  Michihiro Shirakawa ,  Akiyoshi Goto

IPC: G03F7/32 ,  G03F7/11 ,  G03F7/09

Abstract: Provided are a pattern forming method including a step of applying a composition for forming an upper layer film, containing a resin having a C log P(Poly) of 3.0 or more and at least one compound selected from the group consisting of (A1) to (A4) described in the specification onto a resist film to form an upper layer film, a step of exposing the resist film, and a step of developing the exposed resist film with a developer including an organic solvent; a resist pattern formed by the pattern forming method; a method for manufacturing an electronic device, including the pattern forming method; and the composition for forming an upper layer film.

公开(公告)号：US10114292B2

公开(公告)日：2018-10-30

申请号：US15460380

申请日：2017-03-16

Applicant: FUJIFILM Corporation

Inventor： Naoki Inoue ,  Naohiro Tango ,  Michihiro Shirakawa ,  Kei Yamamoto ,  Akiyoshi Goto

IPC: G03F7/004 ,  G03F7/32 ,  G03F7/11 ,  G03F7/38 ,  H01L21/027 ,  C08F220/18 ,  C08F220/28 ,  G03F7/09 ,  G03F7/16 ,  G03F7/20 ,  G03F7/40 ,  G03F7/039

Abstract: Provided are a pattern forming method capable of providing good DOF and LER, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film, followed by carrying out heating to 100° C. or higher, to form the upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern.