Invention Grant
- Patent Title: Dual gate metal-oxide-semiconductor field-effect transistor
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Application No.: US15720977Application Date: 2017-09-29
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Publication No.: US10586865B2Publication Date: 2020-03-10
- Inventor: Scott Warrick , Justin Dougherty , Alexander Barr , Christian Larsen , Marc L. Tarabbia , Ying Ying
- Applicant: Cirrus Logic International Semiconductor Ltd.
- Applicant Address: US TX Austin
- Assignee: Cirrus Logic, Inc.
- Current Assignee: Cirrus Logic, Inc.
- Current Assignee Address: US TX Austin
- Agency: Jackson Walker L.L.P.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/40 ; H01L29/786 ; H01L29/06 ; H01L21/761 ; H01L21/762 ; H01L29/423
Abstract:
A dual-gate metal-oxide-semiconductor field-effect transistor (MOSFET) may include a MOSFET having a channel region, a drain, and a source, a first gate formed proximate to the channel region, a drain extension region formed proximate to the drain, and a second gate formed proximate to the drain extension region.
Public/Granted literature
- US20190103490A1 DUAL GATE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR Public/Granted day:2019-04-04
Information query
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