公开(公告)号：US10586865B2

公开(公告)日：2020-03-10

申请号：US15720977

申请日：2017-09-29

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Scott Warrick ,  Justin Dougherty ,  Alexander Barr ,  Christian Larsen ,  Marc L. Tarabbia ,  Ying Ying

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/786 ,  H01L29/06 ,  H01L21/761 ,  H01L21/762 ,  H01L29/423

Abstract: A dual-gate metal-oxide-semiconductor field-effect transistor (MOSFET) may include a MOSFET having a channel region, a drain, and a source, a first gate formed proximate to the channel region, a drain extension region formed proximate to the drain, and a second gate formed proximate to the drain extension region.

公开(公告)号：US09723578B2

公开(公告)日：2017-08-01

申请号：US15175871

申请日：2016-06-07

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： John L. Melanson ,  Aaron J. Brennan ,  Justin Dougherty ,  Ramya Balasundaram

IPC: G01R31/308 ,  H04W52/36 ,  H04W52/32 ,  G01R31/311 ,  G01R31/28

CPC classification number: H04W52/367 ,  G01R31/2837 ,  G01R31/2875 ,  G01R31/311 ,  H04W52/32

Abstract: In accordance with embodiments of the present disclosure, a method for identifying a location of an integrated circuit that is sensitive to RTS noise may include applying localized heat to a scan area of the integrated circuit, observing any change in one or more electrical parameters of the integrated circuit in response to the localized heat being applied to the scan area indicative of sensitivity to RTS noise, and identifying the location sensitive to RTS noise responsive to observing change in one or more electrical parameters of the integrated circuit indicative of sensitivity to RTS noise in response to the localized heat being applied to the scan area.