公开(公告)号：US10586865B2

公开(公告)日：2020-03-10

申请号：US15720977

申请日：2017-09-29

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Scott Warrick ,  Justin Dougherty ,  Alexander Barr ,  Christian Larsen ,  Marc L. Tarabbia ,  Ying Ying

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/786 ,  H01L29/06 ,  H01L21/761 ,  H01L21/762 ,  H01L29/423

Abstract: A dual-gate metal-oxide-semiconductor field-effect transistor (MOSFET) may include a MOSFET having a channel region, a drain, and a source, a first gate formed proximate to the channel region, a drain extension region formed proximate to the drain, and a second gate formed proximate to the drain extension region.