Invention Grant
- Patent Title: Quasi-synchronous protocol for large bandwidth memory systems
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Application No.: US15821688Application Date: 2017-11-22
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Publication No.: US10592121B2Publication Date: 2020-03-17
- Inventor: Krishna T. Malladi , Hongzhong Zheng
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F13/16 ; G06F12/02 ; G06F15/78 ; G06F13/42

Abstract:
A high-bandwidth memory (HBM) system includes an HBM device and a logic circuit. The logic circuit includes a first interface coupled to a host device and a second interface coupled to the HBM device. The logic circuit receives a first command from the host device through the first interface and converts the received first command to a first processing-in-memory (PIM) command that is sent to the HBM device through the second interface. The first PIM command has a deterministic latency for completion. The logic circuit further receives a second command from the host device through the first interface and converting the received second command to a second PIM command that is sent to the HBM device through the second interface. The second PIM command has a non-deterministic latency for completion.
Public/Granted literature
- US20190079678A1 QUASI-SYNCHRONOUS PROTOCOL FOR LARGE BANDWIDTH MEMORY SYSTEMS Public/Granted day:2019-03-14
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