Invention Grant
- Patent Title: Fast freeform source and mask co-optimization method
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Application No.: US15959123Application Date: 2018-04-20
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Publication No.: US10592633B2Publication Date: 2020-03-17
- Inventor: Luoqi Chen , Jun Ye , Yu Cao
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F7/20 ; G03F1/00 ; G03F1/36

Abstract:
The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.
Public/Granted literature
- US20180239861A1 FAST FREEFORM SOURCE AND MASK CO-OPTIMIZATION METHOD Public/Granted day:2018-08-23
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