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公开(公告)号：US11372337B2
公开(公告)日：2022-06-28
申请号：US17062251
申请日：2020-10-02
IPC分类号： G03F7/20
摘要： A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.
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公开(公告)号：US20210271172A1
公开(公告)日：2021-09-02
申请号：US17176559
申请日：2021-02-16
发明人： Ya Luo , Yu Cao , Jen-Shiang Wang , Yen-Wen Lu
摘要： Methods of determining, and using, a process model that is a machine learning model. The process model is trained partially based on simulation or based on a non-machine learning model. The training data may include inputs obtained from a design layout, patterning process measurements, and image measurements.
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公开(公告)号：US11016395B2
公开(公告)日：2021-05-25
申请号：US16467124
申请日：2017-12-06
发明人： Yu Cao , Yen-Wen Lu , Peng Liu , Rafael C. Howell , Roshni Biswas
摘要： A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function represents a continuous transmission mask and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.
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公开(公告)号：US10795266B2
公开(公告)日：2020-10-06
申请号：US15893305
申请日：2018-02-09
IPC分类号： G03F7/20
摘要： A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.
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公开(公告)号：US10310371B2
公开(公告)日：2019-06-04
申请号：US15144242
申请日：2016-05-02
发明人： Jun Ye , Yu Cao , Hanying Feng
摘要： An efficient OPC method of increasing imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and optimizing target gray level for each evaluation point in each OPC iteration based on this function. In one given embodiment, the function is approximated as a polynomial function of focus and exposure, R(ε,ƒ)=P0+ƒ2·Pb with a threshold of T+Vε for contours, where PO represents image intensity at nominal focus, ƒ represents the defocus value relative to the nominal focus, ε represents the exposure change, V represents the scaling of exposure change, and parameter “Pb” represents second order derivative images. In another given embodiment, the analytical optimal gray level is given for best focus with the assumption that the probability distribution of focus and exposure variation is Gaussian.
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公开(公告)号：US10137643B2
公开(公告)日：2018-11-27
申请号：US14456586
申请日：2014-08-11
摘要： Systems and methods for process simulation are described. The methods may use a reference model identifying sensitivity of a reference scanner to a set of tunable parameters. Chip fabrication from a chip design may be simulated using the reference model, wherein the chip design is expressed as one or more masks. An iterative retuning and simulation process may be used to optimize critical dimension in the simulated chip and to obtain convergence of the simulated chip with an expected chip. Additionally, a designer may be provided with a set of results from which an updated chip design is created.
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公开(公告)号：US09921485B2
公开(公告)日：2018-03-20
申请号：US14880018
申请日：2015-10-09
IPC分类号： G03F7/20
CPC分类号： G03F7/705 , G03F7/70125 , G03F7/70458 , G03F7/70516 , G03F7/70525
摘要： A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.
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公开(公告)号：US20150135146A1
公开(公告)日：2015-05-14
申请号：US14600337
申请日：2015-01-20
发明人： Peng Liu , Yu Cao , Luoqi Chen , Jun Ye
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/705 , G06F17/5009
摘要： A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
摘要翻译： 本发明的三维掩模模型提供了比薄膜模型具有亚波长特征的光刻掩模的三维效果更逼真的近似。 在一个实施例中，三维掩模模型包括空间域中的一组过滤内核，其被配置为与薄膜传输函数进行卷积以产生近场图像。 在另一个实施例中，三维掩模模型包括频域中的一组校正因子，其被配置为乘以薄膜传输函数的傅立叶变换以产生近场图像。
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公开(公告)号：US20150074622A1
公开(公告)日：2015-03-12
申请号：US14543498
申请日：2014-11-17
发明人： Hanying Feng , Yu Cao , Jun Ye
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G03F1/70 , G03F7/70125 , G03F7/70258 , G03F7/70441 , G03F7/705 , G06F17/5009 , G06F2217/06 , G06F2217/08 , G06F2217/10 , G06F2217/12
摘要： Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein, and preferably including optimizing a source, a mask, and the projection optics. The projection optics is sometimes broadly referred to as “lens”, and therefore the joint optimization process may be termed source mask lens optimization (SMLO). SMLO is desirable over existing source mask optimization process (SMO), partially because including the projection optics in the optimization can lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics can be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process. According to the embodiments herein, the optimization can be accelerated by iteratively using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).
摘要翻译： 本发明的实施例提供了优化包括优化其中的投影光学元件的光刻投影设备的方法，并且优选地包括优化源，掩模和投影光学元件。 投影光学器件有时被广泛地称为“透镜”，因此联合优化过程可以被称为源掩模透镜优化（SMLO）。 SMLO对于现有的源掩码优化处理（SMO）是期望的，部分原因在于，通过引入投影光学器件的多个可调特性，优化中的投影光学器件可以导致更大的处理窗口。 投影光学元件可用于在光刻投影设备中形成波前，从而实现整个成像过程的像差控制。 根据本文的实施例，可以通过迭代地使用线性拟合算法或者使用使用传输交叉系数（TCC）的偏导数的泰勒级数扩展来加速优化。
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10.发明申请PATTERN-INDEPENDENT AND HYBRID MATCHING/TUNING INCLUDING LIGHT MANIPULATION BY PROJECTION OPTICS 有权模式独立和混合匹配/调谐，包括通过投影光学的光控制公开(公告)号：US20140282303A1
公开(公告)日：2014-09-18
申请号：US14294745
申请日：2014-06-03
发明人： Hanying FENG , Yu Cao , Jun Ye
IPC分类号： G06F17/50
CPC分类号： G06F17/50 , G02B19/0014 , G02B19/0028 , G02B19/0095 , G03F7/705
摘要： Described herein are methods for matching the characteristics of a lithographic projection apparatus to a reference lithographic projection apparatus, where the matching includes optimizing illumination source and projection optics characteristics. The projection optics can be used to shape wavefront in the lithographic projection apparatus. According to the embodiments herein, the methods can be accelerated by using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).
摘要翻译： 这里描述了将光刻投影设备的特性与参考光刻投影设备进行匹配的方法，其中匹配包括优化照明源和投影光学特性。 投影光学元件可用于在光刻投影装置中形成波前。 根据本文的实施例，可以通过使用线性拟合算法或使用使用传输交叉系数（TCC）的偏导数的泰勒级数扩展来加速该方法。
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