An example embodiment may include a method for defining patterns for conductive paths in a dielectric layer. The method may include (a) forming a mask layer on the dielectric layer, (b) forming on the mask layer a set of longitudinally and parallel extending mask features, each mask feature including a mandrel having a pair of side wall spacers, the mask features being spaced apart such that gaps are formed between the mask features, (c) depositing an organic spin-on layer covering the set of mask features and filling the gaps, (d) etching a first trench in the organic spin-on layer, the first trench extending across at least a subset of the gaps and exposing the mask layer, and (e) depositing in a spin-on process a planarization layer covering the organic spin-on layer and filling the first trench.