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    Patterning Method
    1.
    发明申请
    Patterning Method 审中-公开

    公开(公告)号：US20200075335A1

    公开(公告)日：2020-03-05

    申请号：US16556124

    申请日：2019-08-29

    Applicant: IMEC VZW

    Inventor： Frederic Lazzarino ,  Victor M. Blanco

    IPC: H01L21/033 ,  H01L21/311

    Abstract: An example embodiment includes a patterning method comprising: forming a layer stack comprising a target layer, a lower memorization layer and an upper memorization layer, forming above the upper memorization layer a first mask layer, patterning a set of upper trenches in the upper memorization layer, forming a first block pattern, the first block pattern comprising a set of first blocks, patterning a first set of lower trenches in the lower memorization layer, patterning the patterned upper memorization layer to form a second block pattern comprising a set of second blocks, forming above the patterned lower memorization layer and the second block pattern a second mask layer, patterning a second set of lower trenches in the patterned lower memorization layer, the patterning comprising using the second mask layer, the spacer layer and the second block pattern as an etch mask.

    PATTERNING METHOD
    4.
    发明申请
    PATTERNING METHOD 有权

    公开(公告)号：US20210335611A1

    公开(公告)日：2021-10-28

    申请号：US17238111

    申请日：2021-04-22

    Applicant: IMEC VZW

    Inventor： Frederic Lazzarino ,  Victor M. Blanco

    IPC: H01L21/033 ,  H01L21/768

    Abstract: A method that provides patterning of an underlying layer to form a first set of trenches and a second set of trenches in the underlying layer is based on a combination of two litho-etch (LE) patterning processes supplemented with a spacer-assisted (SA) technique. The method uses a layer stack comprising three memorization layers: an upper memorization layer allowing first memorizing upper trenches, and then one or more upper blocks; an intermediate memorization layer allowing first memorizing intermediate trenches and one or more first intermediate blocks, and then second intermediate blocks and intermediate lines; and a lower memorization layer allowing first memorizing first lower trenches and one or more first lower blocks, and then second lower trenches and one or more second lower blocks.

    Method for producing a pattern of features by lithography and etching
    5.
    发明授权
    Method for producing a pattern of features by lithography and etching 有权

    公开(公告)号：US10818504B2

    公开(公告)日：2020-10-27

    申请号：US16218749

    申请日：2018-12-13

    Applicant: IMEC VZW

    Inventor： Waikin Li ,  Danilo De Simone ,  Sandip Halder ,  Frederic Lazzarino

    IPC: H01L21/308 ,  G03F7/20 ,  G03F1/70

    Abstract: A method for producing a pattern of features on a substrate may involve performing two exposure steps on a resist layer applied to the substrate, followed by a single etching step. In the two exposures, the same pattern of mask features is used, but with possibly differing dimensions and with the pattern applied in the second exposure being shifted in position relative to the pattern in the first exposure. The shift, lithographic parameters, and/or possibly differing dimensions are configured such that a number of resist areas exposed in the second exposure overlap one or more resist areas exposed in the first exposure. When the pattern of mask features is a regular 2-dimensional array, the method produces of an array of holes or pillars that is denser than the original array. Varying the mask patterns can produce different etched structure shapes, such as a zig-zag pattern.

    Patterning method
    7.
    发明授权
    Patterning method 有权

    公开(公告)号：US11476155B2

    公开(公告)日：2022-10-18

    申请号：US17237699

    申请日：2021-04-22

    Applicant: IMEC VZW

    Inventor： Victor M. Blanco ,  Frederic Lazzarino

    IPC: H01L21/768 ,  H01L21/033

    Abstract: A method that provides patterning of an underlying layer to form a first set of trenches and a second set of trenches in the underlying layer is based on a combination of two litho-etch (LE) patterning processes supplemented with a spacer-assisted (SA) technique. The method uses one or more first upper blocks formed by a tone-inversion approach, an upper memorization layer allowing first memorizing upper trenches, and then second upper blocks, and a lower memorization layer allowing first memorizing first lower trenches and one or more first lower blocks, and then second lower trenches and one or more second lower blocks.

    PATTERNING METHOD
    8.
    发明申请
    PATTERNING METHOD 有权

    公开(公告)号：US20210335664A1

    公开(公告)日：2021-10-28

    申请号：US17237699

    申请日：2021-04-22

    Applicant: IMEC VZW

    Inventor： Victor M. Blanco ,  Frederic Lazzarino

    IPC: H01L21/768 ,  H01L21/48 ,  H01L21/033

    Abstract: A method that provides patterning of an underlying layer to form a first set of trenches and a second set of trenches in the underlying layer is based on a combination of two litho-etch (LE) patterning processes supplemented with a spacer-assisted (SA) technique. The method uses one or more first upper blocks formed by a tone-inversion approach, an upper memorization layer allowing first memorizing upper trenches, and then second upper blocks, and a lower memorization layer allowing first memorizing first lower trenches and one or more first lower blocks, and then second lower trenches and one or more second lower blocks.

    Patterning a target layer
    9.
    发明授权
    Patterning a target layer 有权

    公开(公告)号：US10707198B2

    公开(公告)日：2020-07-07

    申请号：US16014888

    申请日：2018-06-21

    Applicant: IMEC VZW

    Inventor： Frederic Lazzarino

    IPC: H01L23/528 ,  H01L27/02 ,  H01L21/033 ,  H01L21/02 ,  H01L21/768

    Abstract: A method is provided for patterning a target layer, the method comprising: (i) forming above the target layer a line mask and a mandrel mask, wherein forming the line mask comprises forming parallel material lines extending in a longitudinal direction, wherein forming the mandrel mask comprises forming a mandrel mask having sidewalls including at least a first sidewall extending transverse to a plurality of the material lines; (ii) forming on the sidewalls of the mandrel mask a sidewall spacer including a first sidewall spacer portion extending along the first sidewall; (iii) partially removing the sidewall spacer such that a remainder of the sidewall spacer comprises at least a part of the first sidewall spacer portion; and (iv) subsequent to removing the mandrel mask, transferring into the target layer a pattern defined by the line mask and the remainder of the sidewall spacer.

    Method for defining patterns for conductive paths in a dielectric layer
    10.
    发明授权
    Method for defining patterns for conductive paths in a dielectric layer 有权

    公开(公告)号：US10593549B2

    公开(公告)日：2020-03-17

    申请号：US15906149

    申请日：2018-02-27

    Applicant: IMEC VZW

    Inventor： Frederic Lazzarino

    IPC: H01L21/311 ,  H01L21/027 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/768

    Abstract: An example embodiment may include a method for defining patterns for conductive paths in a dielectric layer. The method may include (a) forming a mask layer on the dielectric layer, (b) forming on the mask layer a set of longitudinally and parallel extending mask features, each mask feature including a mandrel having a pair of side wall spacers, the mask features being spaced apart such that gaps are formed between the mask features, (c) depositing an organic spin-on layer covering the set of mask features and filling the gaps, (d) etching a first trench in the organic spin-on layer, the first trench extending across at least a subset of the gaps and exposing the mask layer, and (e) depositing in a spin-on process a planarization layer covering the organic spin-on layer and filling the first trench.

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