Invention Grant
- Patent Title: Heart transfer label structure
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Application No.: US16024940Application Date: 2018-07-02
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Publication No.: US10593648B2Publication Date: 2020-03-17
- Inventor: Ilsoo Kim , Heeyoub Kang , Young-Rok Oh , Kitaek Lee , Hwi-Jong Yoo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2016-0151426 20161114; KR10-2017-0020645 20170215
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/36 ; H01L23/373 ; H01L23/544 ; H01L25/10 ; H05K1/18
Abstract:
A semiconductor module includes a substrate, a first package mounted on the substrate, second packages mounted on the substrate, a label layer provided on the substrate, and a heat transfer structure interposed between the substrate and the label layer and overlapping at least two of the second packages in a plan view of the module.
Public/Granted literature
- US20180323175A1 SEMICONDUCTOR MODULE Public/Granted day:2018-11-08
Information query
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