Invention Grant
- Patent Title: Graphene FET with graphitic interface layer at contacts
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Application No.: US16211800Application Date: 2018-12-06
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Publication No.: US10593763B2Publication Date: 2020-03-17
- Inventor: Luigi Colombo , Archana Venugopal
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/16 ; H01L29/786 ; H01L51/00 ; H01L51/05 ; H01L29/45 ; H01L29/66 ; H01L29/778 ; H01L29/40 ; H01L29/417 ; H01L21/02 ; H01L29/51

Abstract:
A method for forming a graphene FET includes providing a graphene layer having a surface. A first metal layer having a work function
Public/Granted literature
- US20190115433A1 GRAPHENE FET WITH GRAPHITIC INTERFACE LAYER AT CONTACTS Public/Granted day:2019-04-18
Information query
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